TZQ5239B-GS18 Allicdata Electronics
Allicdata Part #:

TZQ5239B-GS18-ND

Manufacturer Part#:

TZQ5239B-GS18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 9.1V 500MW SOD80
More Detail: Zener Diode 9.1V 500mW ±5% Surface Mount SOD-80 Qu...
DataSheet: TZQ5239B-GS18 datasheetTZQ5239B-GS18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01852
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 7V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Description

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The TZQ5239B-GS18 is classified under diodes, zener, single category. As the name suggests, it is a single zener diode. In general, single zener diodes are used to protect circuits from overvoltage conditions. The TZQ5239B-GS18 is ideal for this purpose as it is an improved miniaturized design.

The TZQ5239B-GS18 has an exceptionally low leakage current of 25µA and other features like excellent stability at high temperature, fast switching speed and a low forward voltage drop. This makes it an ideal choice for applications where minimal power losses are a major concern. Additionally, it has a reverse voltage of 30V and an instantaneous power rating of 500mW.

The TZQ5239B-GS18 is designed to protect against overvoltage to ensure the integrity of the circuits it is protecting. It defines the upper limit to which the circuits can be exposed to and thus prevents system failure or damages. This is achieved when the voltage applied to the diode reaches or exceeds the breakdown voltage it is designed to protect against. when this happens, the diode becomes an efficient current flow path and in effect a diode clamps the voltage at its breakdown level.

In order to optimize its efficiency, the TZQ5239B-GS18 is designed with an internal clamping structure that helps to evenly distribute the peak current without leading to thermal instability. In addition to helping protect against voltage spikes, it also reduces settling time, which increases its overall efficiency. Furthermore, it also absorbs any residual oscillation or noise present in the circuit.

The TZQ5239B-GS18 diode is especially useful in circumstances where the power dissipation needs to be kept low and the protection needs to be reliable. Because of its low forward voltage drop, it is well suited for battery operated devices—specifically, those subject to high transient voltages. The device is also well suited for use in constant power current supplies, voltage regulation, and power amplifier circuits.

Applications of the TZQ5239B-GS18 include ringers and short-circuit protection for hybrid integrated circuit and mobile applications, solid-state relays for telecom applications, LED displays, and industrial power supplies.

The specific data is subject to PDF, and the above content is for reference

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