TZQ5241B-GS18

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	11V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	22 Ohms
Current - Reverse Leakage @ Vr:	2µA @ 8.4V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF

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The TZQ5241B-GS18 is a single Zener diode that belongs to the TZQ series. It is a low power zener diode with a reinforced insulation structure and offers a high breakdown voltage. The TZQ5241B-GS18 is used in many applications and is suitable for a range of breakout, isolation, grounding, and surge protection. It is also suitable for regulating power consumption in circuits, controlling output voltages, and protecting transistors in an application. When used in circuits, the TZQ5241B-GS18 offers exceptional flexibility and convenience as it operates as both a conductor and an isolator at the same time. It can be used to protect equipment from overvoltage and breakdown. The TZQ5241B-GS18 operates on Zone-Anode Theory. The diode is made up of two semiconductor materials, P and N-type silicon, and is designed to have one end and the other side connected to different potentials respectively. There is a junction between the P-type and N-type silicon, and when this junction is negatively biased, the forward barrier potential prevents the flow of current. On the other hand, when the junction is positively biased, the junction potential is of a magnitude so great that electrons can easily overcome it and allow current to flow. The TZQ5241B-GS18 is widely used in motor, television, air conditioning, and other lighting equipment to protect power tubes, transistors, and other components from overvoltage and breakdown. It is widely used in various types of switching mode power supplies, TV sets, electronic ballasts, and other applications where high reliability and low noise is required. The TZQ5241B-GS18 offers a wide range of advantages which make it an ideal choice for application. It can be used for a variety of applications such as regulating power consumption in circuits, controlling output voltages, and protecting transistors in an application. It is also a great choice for protection against overvoltage and breakdown, because it offers more reliability, less noise, and is more cost effective compared to other zener diodes. The TZQ5241B-GS18 is also an ideal choice when it comes to controlling the flow of current and keeping equipment protected from sudden surges. The internal structure of the TZQ5241B-GS18 is designed with a built-in protective current constriction circuit, which helps in reducing the risk of overvoltage and breakdown. This built-in protective circuit works to limit the maximum forward current, which in turn helps to reduce the risk of damage to components due to sudden surges. In summary, the TZQ5241B-GS18 is a reliable and efficient single Zener diode, suitable for a wide range of applications. It is designed with a reinforced insulation structure which ensures a high breakdown voltage and low leakage current. Its Zone-Anode Theory works to protect components from overvoltage and breakdown by controlling the flow of current and limiting the effects of sudden surges. The TZQ5241B-GS18 is a great choice for controlling output voltages as well as protecting transistors in an application.

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