TZQ5238B-GS18

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	8.7V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	8 Ohms
Current - Reverse Leakage @ Vr:	3µA @ 6.5V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF

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Diodes - Zener - Single

The TZQ5238B-GS18 diode is a single Zener diode that functions as a voltage regulator and a reverse protection device, suitable for a variety of electronic applications. It\'s widely used in power supplies, voltage regulators, and in over-voltage protection applications. This diode is a semiconductor component with a very low forward voltage drop and a very high reverse voltage providing protection against excessive voltage. It limits voltage across the component, dispersing excess voltage in the form of heat. The TZQ5238B-GS18 diode is constructed from a PNP junction at one end, and an NPN junction at the other end. Its voltage breakdown, surge current, and power dissipation all make it ideal for over-voltage protection.The TZQ5238B-GS18 diode is typically used in a variety of electronic devices, including voltage regulators, power supplies, motor control drives, and over-voltage protection circuits. It is used as a voltage reference, providing a predetermined constant voltage across a load. It prevents incremental increase in voltage, reducing the risk of component damage due to excessive voltage. The TZQ5238B-GS18 diode is a standard one-way component, meaning that current only runs in one direction. It allows current to flow in the forward direction and prevents current from flowing in the reverse direction. This is made possible by the Zener junction, which provides a breakdown voltage and inhibits any further current flow in the reverse direction. It is designed to allow a predictable breakdown voltage, with a minimum tolerance. This makes it indispensable in voltage regulation applications, where a known and consistent voltage is a necessity.The diode is made from the semi-conducting element gallium arsenide with a PN junction, creating an electrical barrier between the P-type and N-type semiconductors. The junction prevents current from flowing in the reverse direction, allowing it to work in a Zener breakdown mode, with controlled current and voltage characteristics. It has an exceptionally low forward voltage drop and high reverse voltage, as well as high current handling capability. Its low forward voltage drop enables it to be used in series connection for high-voltage applications with a maximum breakdown voltage of 18 V.The TZQ5238B-GS18 diode offers strong surge current capability and has been designed with a power dissipation of 1.1 watts. The thermal resistance of this diode is a maximum of 4 kelvin per watt of power removal. Additionally, it has an excellent temperature coefficient of less than 2 millivolts per degree Celsius and a maximum reverse current of around 500µA. In summary, the TZQ5238B-GS18 diode is a single Zener diode designed for voltage regulation and protection against excessive voltage. It is widely used in a variety of electronic devices, including voltage regulators, power supplies, motor control drives, and over-voltage protection circuits, and offers exceptional current handling capability and temperature performance.

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