TZS4679-GS08 Allicdata Electronics

TZS4679-GS08 Discrete Semiconductor Products

Allicdata Part #:

TZS4679-GS08GITR-ND

Manufacturer Part#:

TZS4679-GS08

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 2V 500MW SOD80
More Detail: Zener Diode 2V 500mW ±5% Surface Mount SOD-80 Quad...
DataSheet: TZS4679-GS08 datasheetTZS4679-GS08 Datasheet/PDF
Quantity: 10000
2500 +: $ 0.02890
5000 +: $ 0.02514
12500 +: $ 0.02137
25000 +: $ 0.02011
62500 +: $ 0.01885
125000 +: $ 0.01676
Stock 10000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 2V
Tolerance: ±5%
Power - Max: 500mW
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Description

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Introduction of TZS4679-GS08

The TZS4679-GS08 is a single Zener diode that has been designed for use in analog and digital circuits. It is a type of voltage-regulating semiconductor device that uses a mechanism known as “Zener breakdown” to limit the voltage placed across its P-N junction. It is also optimized for use with Schottky-type MOSFETs.

Application Field

The TZS4679-GS08 is designed primarily for use in voltage regulating applications, as well as for applications requiring high-speed switching. It can be used in a wide range of digital and analog circuits, such as TV receivers and power amplifiers, to provide isolated power, discrete logic level regulation and additional power isolation.This diode is rated at a total power dissipation of 10 watts, with a maximum DC reverse voltage of 20V, and a maximum forward voltage of 1V. It is also RoHS compliant.

Working Principle

The TZS4679-GS08 operates on the principle of Zener breakdown. This phenomenon occurs when a P-N junction experiences a large amount of electric field strength, causing a large amount of current to flow through the junction. This results in the rapid drop in the junction’s voltage and subsequent breakdown of the junction.The TZS4679-GS08 is able to effectively regulate the voltage across the junction due to its wide breakdown range, which is between 13V and 22V. It is also designed to provide high-speed switching, with a switching time of 1nsec.

Conclusion

The TZS4679-GS08 is a single Zener diode that has been designed to provide efficient voltage regulation and high-speed switching. It is optimized for use with both digital and analog circuits and is RoHS compliant. It operates via the Zener breakdown principle and has a wide breakdown range between 13V and 22V. Its total power dissipation is rated at 10W, with a maximum reverse voltage of 20V and a maximum forward voltage of 1V.

The specific data is subject to PDF, and the above content is for reference

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