TZS4704-GS08

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	17V
Tolerance:	±5%
Power - Max:	500mW
Current - Reverse Leakage @ Vr:	50nA @ 12.9V
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 100mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	SOD-80 Variant
Supplier Device Package:	SOD-80 QuadroMELF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single

The TZS4704-GS08 is an innovative diode designed for a wide range of applications. It features a unique base design with a maximum reverse voltage of 4.7V, making it well-suited for a variety of power back-up and supply circuits.This zener diode applies the principles of avalanche breakdown and reverse bias operation. Avalanche breakdown occurs when the reverse voltage applied to a p-n junction exceeds its breakdown voltage. This creates an avalanche of electron-hole pairs that travel across the junction and allows current to flow readily. By controlling the voltage applied, the breakdown voltage can be adjusted and the diode can be designed to limit the ready-state current.The TZS4704-GS08 is designed to provide superior protection against reversed power conditions due to its reverse breakdown voltage of 4.7V at 100mA. It has a peak forward current of 250mA and a maximum reverse current rating of 275µA. Furthermore, its reverse recovery time is an impressively fast 10 nanoseconds.The TZS4704-GS08 can be used in power conditioning circuits, SBCs, home appliances, and automotive applications. Its main features include thermal protection, quick recovery, and fast switching speeds. Its compact size makes it suitable for applications where a small form factor is required.The application field of the TZS4704-GS08 depends heavily on its ability to limit current flow in reverse bias conditions. Its 4.7V maximum reverse voltage allows it to be used in applications where reliable current limiting is required. These applications include power supplies, inverters, and computing and communications systems.In addition, the fast switching speeds of the diode makes it an ideal choice for high frequency applications, such as in data transceivers, filtering, and display drivers. Finally, its thermal protection feature makes it a good choice for applications such as road lighting, automotive applications, and solar energy systems.In terms of its working principle, the TZS4704-GS08 works in a manner similar to other zener diodes. Upon applying a reverse bias voltage to the P-N junction, the current flow increases initially, but then when the current surpasses a certain threshold, called the zener voltage, the device enters a reverse breakdown region. At this point, the diode begins to limit the current and protect the remainder of the circuit.The working principle of the zener refers to an intrinsic property of p-n junction diodes. When a reverse bias voltage is applied to a reverse biased diode, electrons flow from the N region to the P region, creating an avalanche of electron-hole pairs across the junction. These pairs then allow current to flow through the diode and, thus, limit its current in a manner similar to the breakover voltage of a thyristor.In conclusion, the TZS4704-GS08 is an innovative and high-performance diode with a wide range of applications. Its fast switching speeds, reverse breakdown voltage of 4.7V, and thermal protection make it suitable for a number of applications including power back-up and supply circuits, SBCs, home appliances, data transceivers, road lighting, and solar energy systems. Its working principle involves the avalanche breakdown of a p-n junction diode that initiates the current limiting action of the diode.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description