TZS4681-GS08

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Diodes come in different variations depending on their specific application. Zener diodes and single diodes are a popular choice when it comes to engineering and circuit design. A TZS4681-GS08 is a single Zener diode with a particularly advantageous application field and working principle.

The TZS4681-GS08 is a dynamic, low leakage and high reverse power Zener diode. It is designed for control applications in automotive electronics. It is compliant to the AEC Q101 standard for long-term reliability and is also suitable for industrial environments.

The TZS4681-GS08 has a mark code of *E08, indicating it has a low leakage, good dynamic response and a peak reflow temperature of 2800C. It has a high stand-off, high break-down and pulse width of 200 microseconds and a high surge withstand of 1kW, 5% rated power.

The TZS4681-GS08 has a 4.7V Zener breakdown voltage with a 0.2mA max reverse leakage current. It operates at 200mA continuous forward current and has a power dissipation of 400mW. The junction to ambient thermal resistance is 25.3K/W.

The TZS4681-GS08 can be used in switching regulator circuits, voltage references, voltage clamping, ESD protection and for transient protection. In its operation, it relies on the Zener breakdown effect — which only occurs in junction-grade diodes — to produce a stable voltage output.

The Zener breakdown effect occurs when the junction voltage of the diode reaches a certain level known as the Zener voltage or Zener breakdown voltage. At this level, the electrons in the junction start to tunnel across the otherwise blocked junction. This process increases the conduction across the junction and leads to a voltage drop that stabilizes at a low level when the forward current is constant.

The TZS4681-GS08 is well suited to work in the dynamic and stability requirements of automotive electronics and is an ideal choice for applications requiring a Zener diode. It is reliable, efficient and simple to use.

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