UDZSTE-175.6B Discrete Semiconductor Products |
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Allicdata Part #: | UDZSTE-175.6BTR-ND |
Manufacturer Part#: |
UDZSTE-175.6B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 5.6V 200MW UMD2 |
More Detail: | Zener Diode 5.6V 200mW ±2% Surface Mount UMD2 |
DataSheet: | UDZSTE-175.6B Datasheet/PDF |
Quantity: | 12000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 60 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 2.5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | UMD2 |
Base Part Number: | UDZ5V6 |
Description
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Diodes - Zener - Single UDZSTE-175.6B Application Field and Working Principle
The UDZSTE-175.6B belongs to the category of Diodes - Zener - Single, a type of semiconductor diode device. It is typically made up of silicon-based semiconductor materials and functions as a voltage regulator to achieve controlled current with a high pre-set voltage. It has a wide range of applications in electrical fields, including in uses as a reference voltage source, a shunt regulator and as a voltage protector.General Overview
The UDZSTE-175.6B comes with a power rating of 0.5 Watt, with a breakdown voltage ranging from 175.6 Volts. It contains an entire range of working currents, with maximum peak reverse voltage and maximum reverse power at the breakdown voltage of 175.6 Volts providing protection against over-voltage. It is specially designed within TO-92 package with construction of oxide coated guard ring that further heighten its over-voltage protection. It is a two terminal device and has a temperature coefficient range as low as 6.8 mV/°C.Application Field
The UDZSTE-175.6B Zener diodes can mainly be employed for the regulation of voltage in various projects. Typical applications include those which require long-term reference accuracy and those containing data acquisition systems. It can also be employed in any situation where high voltage is required, such as in relay, motors, thermostats, and other high power applications. The high-temperature protection provides more reliable and stable regulation of current over time. Another application field is to use this diodes as voltage protectors in communication, automation and other electronic systems.Working Principle
The working principle of the UDZSTE-175.6B is based on a simple Zener diode configuration. In operation, when the reversed bias voltage is less than the Zener reference voltage, it behaves as a normal silicon diode and blocks the current flow in the reverse direction. However, when the reversed bias voltage is higher than the Zener reference, a large enough current passes through the Zener junction, leading to an avalanche breakdown – which allows the controlled current flow from the anode to the cathode. The reference voltage of these diodes is typically set to the breakdown voltage. By controlling the amount of the controlled current, the power is regulated within the specified parameters.Conclusion
The UDZSTE-175.6B Zener Diodes, belonging to the Diodes - Zener - Single category, provides highly useful applications, particularly in electrical applications that require a fixed voltage reference or voltage protection. Its power rating of 0.5 watt and reverse voltage range of 175.6 Volts, along with its temperature coefficient range of 6.8 mV/°C makes it extremely reliable. Its working principle of reference voltage is based on an avalanche breakdown from the anode to cathode. This device can greatly benefit a wide range of applications in both electrical and communication fields.The specific data is subject to PDF, and the above content is for reference
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