UDZSTE-173.6B Discrete Semiconductor Products |
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| Allicdata Part #: | UDZSTE-173.6BTR-ND |
| Manufacturer Part#: |
UDZSTE-173.6B |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | DIODE ZENER 3.6V 200MW UMD2 |
| More Detail: | Zener Diode 3.6V 200mW ±3% Surface Mount UMD2 |
| DataSheet: |  UDZSTE-173.6B Datasheet/PDF |
| Quantity: | 21000 |
| 3000 +: | $ 0.03669 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Voltage - Zener (Nom) (Vz): | 3.6V |
| Tolerance: | ±3% |
| Power - Max: | 200mW |
| Impedance (Max) (Zzt): | 100 Ohms |
| Current - Reverse Leakage @ Vr: | 10µA @ 1V |
| Operating Temperature: | -55°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-90, SOD-323F |
| Supplier Device Package: | UMD2 |
| Base Part Number: | UDZ3V6 |
Description
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UDZSTE-173.6B is a Single Zener Diode, a type of diode designed specifically to allow current to flow in the opposite direction compared to normal diodes. This makes it ideally suited for overvoltage protection and voltage regulation applications. Commonly used in consumer electronics, it is packaged in the SOD-123 package for easy installation.The UDZSTE-173.6B offers a maximum reverse breakdown voltage of 173.6 V and a maximum continuous current of 200 mA. Its’ wide operating temperature range, from -55°C to +125°C, makes it suited for uses in a variety of industrial and consumer applications. The principle of operation of the UDZSTE-173.6B, as with all single zener diodes, is based on the Zener breakdown effect. When the reverse breakdown voltage of the diode is greater than the voltage applied across it, current starts to flow. When the applied voltage is greater than the Zener breakdown voltage, current continues to flow in the forward direction and the diode continues to operate normally.However, when the reverse voltage is applied to the diode across the cathode and the anode, the depletion layer between the two, gets wider than when the reverse conduction isn’t present. This allows for the majority carriers in the junction to be swept away by the electric field, creating a conductive path which allows for current to flow in reverse direction.The Zener breakdown process occurs when the electric field within this path is strong enough to cause the electrons to gain sufficient energy to get over the energy gap of the semiconductor material, allowing them to be swept away. This in turn causes the breakdown voltage to increase, resulting in a reverse bias and current flow.The forward voltage drop of a single zener diode is typically lower compared to regular diodes due to its low reverse leakage current. This makes them more suitable for applications which require high current flow. The UDZSTE-173.6B has a forward voltage rating of approximately 1.1V, making it ideal for powering small electronics like LED’s and sensors.The UDZSTE-173.6B finds use in a variety of applications including overvoltage protection, voltage clamping, regulated DC power supply, and so on. It is available in a wide range of Zener voltages, from 2.4V to 188V and with a wide range of temperature ratings.The UDZSTE-173.6B offers a variety of advantages which makes it an ideal choice for protection and regulation applications. Its wide operating temperature range, low forward voltage drop, high current rating and its SOD-123 package make it ideal for use in a range of applications.
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