Allicdata Part #: | UDZS33BR9G-ND |
Manufacturer Part#: |
UDZS33B R9G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 33V 200MW SOD323F |
More Detail: | Zener Diode 33V 200mW ±2% Surface Mount SOD-323F |
DataSheet: | UDZS33B R9G Datasheet/PDF |
Quantity: | 1000 |
40000 +: | $ 0.02318 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 100 Ohms |
Current - Reverse Leakage @ Vr: | 45nA @ 25V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | SOD-323F |
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The UDZS33B R9G is a single Zener diode, which is designed for application in a wide range of areas. It is constructed from a silicon material to contain a reverse breakdown voltage of 9V and a power rating of 330mW. In addition, the UDZS33B R9G features tight limits for maximum reverse leakage current and voltage.
The great advantage of the UDZS33B R9G diode is that it directly names which breakdown voltage (9V) and power rating (330mW) it has so there is no need to look up the data in a datasheet. This factor makes it very convenient to use.
The UDZS33B R9G Zener diode is a two-terminal and semiconductor device which is composed of a junction between p and n-type materials. Additionally, an epitaxial layer is grown on the p-type material and it is referred to as an active region. When a diode is forward biased, electron and hole current flows across the junction and when a reverse voltage is applied the depletion region increases. With increasing reverse bias, the current decreases. The breakdown voltage of a diode is the voltage where further increase in reverse voltage does not further increase the depletion region across the junction. Above the breakdown voltage, current any start to flow in the reverse direction for a low voltage.
The UDZS33B R9G Zener diode is an efficient and reliable device to use for a wide variety of applications, such as for voltage regulation, voltage matching and surge suppression. For voltage regulation, the diodes can be used in series with a regulating power source and when used in this way, they will institute a voltage in the circuit which is a reference voltage that is equal to the breakdown voltage of the diode. Voltage matching applications can require a care when selecting the right Zener diode and it is important to pay attention to the current flow and voltage that the diode can handle. Additionally, Zener diodes can also be used for a range of surges, such as lightning surges, spikes and transients. These diodes protect the circuit by diverting the excess current away from the circuit and they are a great option when it comes to keeping the voltage of a circuit low.
In conclusion, the UDZS33B R9G is a single Zener diode which is designed for a range of applications, from voltage regulation to surge protection. It is constructed from a silicon material in order to contain a reverse breakdown voltage of 9V and a power rating of 330mW. Additionally, it has tight limits for maximum reverse leakage current and voltage, making it an efficient and reliable device. The UDZS33B R9G is a great option for any application that requires a Zener diode.
The specific data is subject to PDF, and the above content is for reference
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