Allicdata Part #: | UDZS33BRRG-ND |
Manufacturer Part#: |
UDZS33B RRG |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE ZENER 33V 200MW SOD323F |
More Detail: | Zener Diode 33V 200mW ±2% Surface Mount SOD-323F |
DataSheet: | UDZS33B RRG Datasheet/PDF |
Quantity: | 1000 |
36000 +: | $ 0.01429 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±2% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 100 Ohms |
Current - Reverse Leakage @ Vr: | 45nA @ 25V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-90, SOD-323F |
Supplier Device Package: | SOD-323F |
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Zener diodes are one of the most important components in electrical and electronic engineering, offering efficient and durable solutions to a variety of power handling applications. The particular type in focus here is a UDZS33B RRG. This diode is a silicon-based, dual-junction, reverse-recovery diode, typically classified as a “zener” style device. It provides a low-power solution in the mid-range zener voltage class and is capable of sustaining up to 30 mA continuous operation with a Vz rating of 33 volts.
The first two characteristics of this device describe the basic function of all zener diodes: reverse junction breakdown and reverse leakage current. Just like any other type of diode, a zener diode is designed to allow current to flow uninterruptedly in one direction (anode to cathode) on the forward biased side of the device. On the reverse bias side, however, once the breakdown voltage (Vz) is exceeded, the diode will start to pass current in the opposite direction. This phenomenon is called the zener effect and is used to provide a well-controlled, low voltage drop in the power handling circuit.
How is the UDZS33B RRG able to regulate the flow of current to such a high degree of accuracy? It all has to do with the design of the device itself. By utilizing a dual-junction structure, in which one junction provides an avalanche breakdown and the other a zener breakdown, the device is able to regulate current more precisely than many other zener diode types. Additionally, the device utilizes a reverse recovery time (trr) of 15 μs to ensure that the current does not overshoot the desired value.
Thanks to the combination of these two features, the UDZS33B RRG is able to reliably regulate current between 0 and 30 mA with a maximum power dissipation of 1.4 W. There are a few applications for which this device is particularly well suited. One such application is an AC/DC converter, in which the UDZS33B RRG can help maintain a constant output voltage even in the presence of fluctuations in the AC input voltage.
Simplified schematics of the UDZS33B RRG are typically presented with only three terminals (anode, cathode, and control) in order to demonstrate its simplicity. When the circuit is placed in the OFF state, the current flowing through the device is blocked by the zener diode’s reverse-polarity junction. In the ON state, however, the zener diode operates in its zener breakdown region and the current is regulated according to the voltage drop across the diode’s terminals. In this way, the UDZS33B RRG can provide a reliable and accurate basis for regulating AC input voltage in order to achieve a steady DC output voltage.
Overall, it is clear that the UDZS33B RRG is a useful and versatile device for a variety of applications, primarily due to its fast reverse-recovery time and dual-junction structure. Thanks to the efficient and accurate current regulation offered by the device, it can help save energy and reduce the complexity of the power handling circuitry in electronic applications, making it an attractive solution for low-power, mid-range voltage applications.
The specific data is subject to PDF, and the above content is for reference
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