UFS530J/TR13 Allicdata Electronics
Allicdata Part #:

UFS530J/TR13-ND

Manufacturer Part#:

UFS530J/TR13

Price: $ 1.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 300V 5A DO214AB
More Detail: Diode Standard 300V 5A Surface Mount DO-214AB
DataSheet: UFS530J/TR13 datasheetUFS530J/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.75518
Stock 1000Can Ship Immediately
$ 1.95
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: UFS530
Description

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The UFS530J/TR13 is a single rectifier diode that is used in many electronic components and systems. This diode is well-suited for high-frequency, medium-to-high current applications that require low-loss performance. It offers excellent dynamic characteristics, with a fast switching speed, low forward voltage drop, and low reverse leakage current. The UFS530J/TR13 also has a wide temperature range and is highly reliable in harsh environments.

The UFS530J/TR13 rectifier diode is a low-loss diode, and is used in applications such as power supplies, automotive circuits, audio applications, rectification, and optoelectronics. It is often used in power circuits where it is necessary to convert alternating current (AC) to direct current (DC). It is also used in low-noise applications, such as high-frequency oscillators and amplifiers, because of its low-loss performance.

The UFS530J/TR13 rectifier diode has a high breakdown voltage of 530 volts. This voltage rating allows for the diode to be used in circuits that require a high voltage rating, such as automotive circuits. The diode also has a low forward voltage drop, which is less than 0.6 volts, and a reverse leakage current of less than 0.1 microamps. These characteristics make the diode ideal for high-frequency and high-current applications, as they reduce the device’s power dissipation.

The working principle of the UFS530J/TR13 is based on the diode’s two distinct junction types, the p-n junction and the Schottky junction. A p-n junction is formed by combining two different semiconductor materials, such as p-type and n-type silicon. The p-n junction is responsible for the behavior of the diode when a voltage is applied to it. The Schottky junction is formed by reducing the bandgap between two similar semiconductor materials, such as p-type and n-type silicons. The Schottky junction is responsible for the diode’s fast switching speeds.

The UFS530J/TR13 has a variety of uses in different applications, including power supplies, automotive circuits, audio applications, optoelectronics, and rectification. It is an ideal choice for high-frequency and medium-to-high current applications that require low-loss performance. It has an excellent dynamic characteristic with a fast switching speed and a low forward voltage drop, as well as a high breakdown voltage and a low reverse leakage current. The diode is also highly reliable and resistant to harsh environments. Therefore, the UFS530J/TR13 is an ideal choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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