UFS570G/TR13 Allicdata Electronics
Allicdata Part #:

UFS570G/TR13-ND

Manufacturer Part#:

UFS570G/TR13

Price: $ 2.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 700V 5A DO215AB
More Detail: Diode Standard 700V 5A Surface Mount DO-215AB
DataSheet: UFS570G/TR13 datasheetUFS570G/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.93158
Stock 1000Can Ship Immediately
$ 2.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 700V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 700V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: UFS570
Description

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The UFS570G/TR13 is a single-package Schottky rectifier designed for use in aerospace, consumer, and industrial applications. It is a robust, low voltage rectifier designed to operate efficiently under commercial, military and space conditions. This device is specifically designed for rectifying low voltage DC power supplies with a nominal voltage range of up to 50V and a maximum reverse voltage of 100V. The UFS570G/TR13 is capable of delivering up to 2.5A of continuous current while operating at temperatures from -55°C to 150°C, making it ideal for use in applications where extreme temperatures are encountered.The UFS570G/TR13 is a three-terminal, two-pin device. The two pins are a cathode, which is typically grounded, and an anode, which receives the input voltage. The third terminal is a gate, which can be used to control the device’s conductivity. The gate can be used to control the on and off state of the device, allowing for the adjustment of the device’s current flow.The UFS570G/TR13 rectifier is designed to operate in both forward and reverse bias applications, with the anode and gate terminals designated accordingly. In forward bias, the anode receives the input voltage, while the gate and cathode are held at ground. The forward voltage drop across the UFS570G/TR13 increases with the current flowing through it, providing an effective control over the output voltage.In reverse bias, the gate is connected to the anode, while the cathode is connected to the input voltage source. The voltage drop across the UFS570G/TR13 decreases with the current flowing through it, providing an effective control over the reverse current. The reverse voltage drop is significantly lower than with other rectifier devices, allowing the UFS570G/TR13 to efficiently operate in high current applications.The UFS570G/TR13 can also be used in combination with other devices in order to create an efficient, low voltage power supply. In this configuration, the input voltage is typically fed into the anode, while the gate and cathode terminals of the UFS570G/TR13 are connected to the additional devices. This allows the UFS570G/TR13 to control the voltage and current of the output device, allowing for improved efficiency and lower power losses.In addition to its use as a rectifier, the UFS570G/TR13 is also useful for protection of other components from over-voltage and over-current situations. The device can be connected in parallel with other components, and its low forward voltage drop ensures that the maximum voltage applied does not exceed the input voltage. Additionally, the low reverse voltage drop of the device ensures that an over-current situation does not damage other components of the system.Overall, the UFS570G/TR13 is an efficient single diode rectifier that is suitable for use in a variety of commercial, military and space applications. Its low forward and reverse voltage drops make it particularly well suited for applications where efficient power supply conversion is required. Additionally, the device’s low voltage drop also makes it ideal for protection of other components in high power applications.

The specific data is subject to PDF, and the above content is for reference

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