UFS580G/TR13 Allicdata Electronics
Allicdata Part #:

UFS580G/TR13-ND

Manufacturer Part#:

UFS580G/TR13

Price: $ 2.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 800V 5A DO215AB
More Detail: Diode Standard 800V 5A Surface Mount DO-215AB
DataSheet: UFS580G/TR13 datasheetUFS580G/TR13 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.93158
Stock 1000Can Ship Immediately
$ 2.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: UFS580
Description

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UFS580G/TR13 is a single, high-efficiency rectifier diode belonging to chip-based, high-frequency switching diode. A rectifier diode is a two-lead semiconductor device in which an electric current can pass in only one direction. UFS580G/TR13 has a low reverse voltage rating of 400V, a rated current of 0.7A, and a low forward voltage drop of 0.4V.

UFS580G/TR13 is designed for extreme temperature operation with a thermal stability and dynamic impedance performance between -50 and 125 degrees Celsius. The high frequency switching capabilities of this rectifier make it suitable for several LCD display and LED lighting applications. UFS580G/TR13 is also commonly used in inverter systems, solar cell or battery chargers, and medical equipment.

The working principle of UFS580G/TR13 lies in its two-layer construction. Its anode layer is an N-type silicon piece and its cathode layer is a P-type silicon piece. Together, the junction of these two layers forms a PN-junction. When a reverse voltage is applied to the PN-junction, the voltage augments the potential difference between the two layers and hence the majority carriers (holes in the P-layer and electrons in the N-layer) are pushed away from the junction. This depletion region creates a barrier that prevents any further current flow. On the other hand, when a forward voltage is applied to the PN-junction, minority carriers flow across the junction and create a current, thus acting as a conducting device.

The efficiency of UFS580G/TR13 operation is determined by its characteristic curves, which distinguish it from other types of rectifier diodes. Its High Current Direct Transfer (HCDR) operation makes it more suitable for high frequency switching applications and its relatively low voltage drop makes it an ideal choice for energy-saving solutions. Its high voltage strength also makes it reliable for applications with sudden power spikes and its Thermal Compensation coefficient minimizes the temperature variation effects on device\'s performance.

UFS580G/TR13 with its superior performance, high frequency switching capability, and versatility makes it an ideal choice for several power supplies and energy saving applications. Apart from providing cost-efficiency and low voltage drop, UFS580G/TR13 provides enhanced reliability and performance with its wide operating temperature range and high voltage strength. It is a high-performance, single-chip rectifier diode.

The specific data is subject to PDF, and the above content is for reference

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