Allicdata Part #: | UG06BA1G-ND |
Manufacturer Part#: |
UG06B A1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 600MA TS-1 |
More Detail: | Diode Standard 100V 600mA Through Hole TS-1 |
DataSheet: | UG06B A1G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.06590 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 600mA |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 600mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 15ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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UG06B A1G is a kind of single rectifier diode. It has two terminals, an anode and a cathode. The anode is usually marked with a "+" indication, while the cathode is usually marked with a "-" indication.
This diode is made from a special material – silicon, which has a high temperature and electrical properties. Compared to other materials, silicon material has the advantages of fast switching, low losses and low cost. The UG06B A1G uses low forward voltage drop and high reverse power dissipation, which makes it ideal for a wide variety of applications.
The application field of UG06B A1G includes electrical devices and power supply, security systems, charging devices, automotive, and medical systems. It can be used as a controlling part in any application that requires a low-voltage drop or a high-voltage clamping part.
The working principle of UG06B A1G is that when a reverse voltage is applied to the diode, the current will not flow through it. However, when a forward voltage is applied to the diode, the current will start flowing through it. This process is known as rectification and is enabled by the rectifying property of the diode. The electrons in the diode start moving in a particular direction, and the current flows in the same direction.
UG06B A1G has many features, such as high current carrying capacity, low forward voltage drop, and low capacitive coupling. It is suitable for a wide range of applications, including automotive, medical, security, and power supply. UG06B A1G is available in a wide range of packages and can be used for both lead-free and leaded solder processes. It is a reliable and economical choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UG06D/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 600MA... |
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