Allicdata Part #: | UG06DA1G-ND |
Manufacturer Part#: |
UG06D A1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 600MA TS-1 |
More Detail: | Diode Standard 200V 600mA Through Hole TS-1 |
DataSheet: | UG06D A1G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.06590 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 600mA |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 600mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 15ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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UG06D A1G diodes are rectifiers that are used in a variety of applications, from power supplies to mobile phones. These diodes feature high power efficiency and low forward voltage drop. They are specifically designed for large current applications, such as high frequency switching circuits, motor drives, control circuits, and power rectification. They are also suitable for harsh environment applications.
UG06D A1G diodes consist of two semiconductor layers, an anode and a cathode. The anode is the positively charged electrode and the cathode is the negatively charged electrode. Electric current flows from the anode to the cathode when a voltage is applied. In a diode circuit, the diode can be used to allow current to flow in one direction only.
UG06D A1G diodes are used in a variety of power supply applications due to their ability to provide high power efficiency and low forward voltage drop. They are used in AC/DC converters, DC/DC converters, switching power supplies, and other applications. They can also be used as a rectifier in automotive, lighting, and communications systems.
The working principle of UG06D A1G diodes is based on a PN junction. A PN junction is a boundary between a P-type semiconductor and an N-type semiconductor. At the PN junction, the electrons from the N-type semiconductor are attracted to the holes in the P-type semiconductor. The attraction between the electrons and holes creates an electric field, which is known as the depletion layer. This electric field prevents current from flowing from the P-type to N-type semiconductor.
When a voltage is applied to a UG06D A1G diode, the electric field in the depletion layer weakens. This allows the electrons to flow from the N-type to the P-type and current to flow through the diode in one direction. The diode will then act as a rectifier, allowing current to flow in one direction only and blocking the reverse direction.
UG06D A1G diodes are used in a variety of high frequency switching circuits, motor drives, control circuits, and power rectification applications. They are highly reliable and are designed to handle large currents and withstand harsh environmental conditions. They provide high power efficiency and low forward voltage drop, making them an ideal choice for power supply applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UG06D/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 600MA... |
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