Allicdata Part #: | UG06CHA0G-ND |
Manufacturer Part#: |
UG06CHA0G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 150V 600MA TS-1 |
More Detail: | Diode Standard 150V 600mA Through Hole TS-1 |
DataSheet: | UG06CHA0G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.07194 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 600mA |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 600mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 15ns |
Current - Reverse Leakage @ Vr: | 5µA @ 150V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
UG06CHA0G Application Field and Working Principle
Diode is a basic electronic component that can be used as a switch and a rectifier. UG06CHA0G diode is a small signal Schottky rectifier with high current capabilities that use advanced technology to minimize voltage drop and maximize efficiency. The device has two terminals: the anode, which is the positive side; and the cathode, which is the negative side.
As with most Schottky rectifiers, this diode has a low forward voltage and high speed response. It also has a much lower leakage current and a much higher surge current rating compared to conventional rectifier diodes. With its low forward voltage and high speed response, it is ideal for use in switching power supplies, voltage regulators, and other applications where fast switching speed is required.
UG06CHA0G is usually rated at 30V, 1A and has a maximum operating temperature of 125°C. It offers a very high forward voltage of 0.3V at 1A, which is nearly 60% better than standard rectifier diodes. It is also very resistant to the effects of thermal shock and heat generated by the surrounding components. The maximum junction temperature rise at full load of 150°C is about 20°C lower than for standard diodes.
The working principle of the Schottky rectifier is very different from the conventional rectifier diodes. The Schottky rectifier Diode is a type of rectifier that is based on the Schottky barrier, which was first proposed by German physicist Walter Schottky in 1934. It is formed when two materials with different work functions, such as a metal and a semiconductor, come in contact with each other. The Schottky barrier has a built-in diode characteristic which makes it suitable for rectification purposes.
When a positive voltage is applied to anode, the junction between the two materials will become forward biased, allowing current to flow from the anode to the cathode. Since the barrier height is lower in Schottky diodes than in conventional diodes, the forward voltage drop is much lower. This allows for more efficient usage of the applied voltage and less power loss due to heat.
When a negative voltage is applied to the anode, the junction will become reverse biased. This causes a reverse current to flow from the cathode to the anode, which prevents current from flowing in the forward direction. The low forward voltage drop and high reverse voltage blocking capabilities make the Schottky diodes ideal for use as rectifiers. They are also suitable for use in power supplies, charge pumps and voltage multipliers, and for providing EMI/RFI noise suppression.
In summary, the UG06CHA0G diode is a Schottky barrier rectifier offering excellent performance. It has very low forward voltage drop and a high speed response that make it ideal for switching power supplies and voltage regulators. It also has a much lower leakage current and high surge current rating, and is resistant to the effects of thermal shock and heat.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UG06D/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 600MA... |
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