Allicdata Part #: | UG06BHA1G-ND |
Manufacturer Part#: |
UG06BHA1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 600MA TS-1 |
More Detail: | Diode Standard 100V 600mA Through Hole TS-1 |
DataSheet: | UG06BHA1G Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.07194 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 600mA |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 600mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 15ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | T-18, Axial |
Supplier Device Package: | TS-1 |
Operating Temperature - Junction: | -55°C ~ 150°C |
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UG06BHA1G is a type of rectifier diode commonly used in power semiconductors. It is a rectifier diode composed of monocrystalline silicon, which has excellent performance in high power and high current. In addition, it can be used in bridge circuits and AC/DC converters. UG06BHA1G is widely used in AC port protection, DC rectification, current limiting, and switch control.
The working principle of UG06BHA1G rectifier diode is based on the fact that the diode can only conduct current in one direction, it is an important electronic component in electronic circuits. When the anode is connected to the positive voltage, electrons are forced out of the anode and flow into the cathode. The reverse bias voltage will not cause the reverse current to flow. This is the so-called rectification effect.
The device also has good thermal balance properties, allowing it to function as a heat sink, dissipating heat away from sensitive components. The UG06BHA1G can be used for AC-DC conversion at high voltage and low frequency. It can be used in pre-regulation, post-regulation, and bridge rectification circuits, make sure that the circuit operates under nominal conditions, and can ensure accuracy of system results.
The insertion and withdrawal loss of the UG06BHA1G is remarkably low, making it ideal for power control applications. The UG06BHA1G is designed for use in high frequency, high speed switching power supplies. It is capable of handling high switching frequencies, low reverse leakage, and provides a low forward voltage drop. Moreover, it is also well-suited for applications in the automotive, consumer, industrial, and telecom markets.
UG06BHA1G rectifier diodes can be used in a wide range of applications. It can be used in over-voltage/over-current protection to prevent catastrophic failure, as well as in AC-DC conversion circuits. It is also used in voltage regulation, pulse shaping and waveform generation, switch control, and smart power control. It is also used in power supply systems, motor controllers, and industrial applications such as railway systems, factory automation, and test and measurement.
In short, UG06BHA1G rectifier diodes are used for rectification and power control and are designed for use in high frequency, high speed switching power supplies. They have low insertion and withdrawal losses, low reverse leakage, and low forward voltage drop. UG06BHA1G rectifier diodes can be used in a wide range of applications such as over-voltage/over-current protection, AC-DC conversion, voltage regulation, and power supply systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UG06D/54 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D R0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A1G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D A0G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHR0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA1G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06AHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06BHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06CHA0G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06DHA0G | Taiwan Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 600MA... |
UG06A-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 600MA ... |
UG06B-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 600MA... |
UG06C-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 600MA... |
UG06D-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 600MA... |
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