Allicdata Part #: | UGB10BCTHE3/81-ND |
Manufacturer Part#: |
UGB10BCTHE3/81 |
Price: | $ 0.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 100V 5A TO263AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 100V 5A... |
DataSheet: | UGB10BCTHE3/81 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.50274 |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Base Part Number: | UGB10BCT |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
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Diodes - Rectifiers - Arrays deals with electronic devices that, when connected to a power source, allow current to flow in one direction only. The UGB10BCTHE3/81 is a diode, which is a two-terminal electronic component that forms the fundamental building block of modern electronics. It is part of a family of "high-speed rectifiers," which are devices that offer an increased level of circuit protection.
The UGB10BCTHE3/81 is designed for use in applications such as high-frequency switching and telecom power supplies, as well as in computers and network systems. This diode helps to ensure the reliability of the circuits it is used in. It features a built-in thermal protection system that helps to prevent destructive thermal runaway conditions, and also has reverse bias protection to protect against potential damage caused by inductive flyback.
The main elements used in the UGB10BCTHE3/81 are the silicon substrate and the n-type semiconductor material. The n-type material is composed of electrons that have negative charge, while the p-type material has positively charged holes. The silicon substrate is used as a host for both the n-type and p-type materials, providing the foundation for the diode\'s structure.
The working principle of UGB10BCTHE3/81 can be explained in simple terms. This diode allows current to flow in one direction only (from cathode to anode) under normal operating conditions. When the voltage potential between the two ends of the diode is higher at the anode than at the cathode, the device is considered "forward biased" and current begins to flow. This flow is inhibited when either the anode or cathode voltage potential is higher, creating a barrier that blocks further current flow.
The UGB10BCTHE3/81 is ideal for use in circuits that require a high-speed rectifier, as well as for protection of other components in a circuit. This diode is well suited for use in telecom power supplies, computer systems and high-frequency switching applications. Its robust structure and built-in safety features provide an increased level of circuit protection, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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