UGB10DCTHE3/45 Allicdata Electronics
Allicdata Part #:

UGB10DCTHE3/45-ND

Manufacturer Part#:

UGB10DCTHE3/45

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ARRAY GP 200V 5A TO263AB
More Detail: Diode Array 1 Pair Common Cathode Standard 200V 5A...
DataSheet: UGB10DCTHE3/45 datasheetUGB10DCTHE3/45 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.45486
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Base Part Number: UGB10DCT
Description

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The UGB10DCTHE3/45 is a 10A, 400V 4-channel array of power diodes. The UGB10DCTHE3/45 is used in a wide range of applications for both regular and pulsed operation, typically in mains power supply, AC/DC rectification, protection, and power conversion systems. The UGB10DCTHE3/45 provides an extremely low forward voltage drop, excellent thermal characteristics and low power loss.

The UGB10DCTHE3/45 is constructed with 4 initial power diodes, arranged in a single array. This array is then integrated with a single body to form the device, making it suitable for use in a wide range of circuits. The diodes in the UGB10DCTHE3/45 are typically employed in reduce voltage applications, such as power factor correction and power management solutions.

The UGB10DCTHE3/45 has a low forward voltage drop, typically 0.34 volts, allowing the device to reduce the voltage in applications with large voltage drops. The thermal characteristics of the UGB10DCTHE3/45 are excellent, with a maximum junction temperature of 175°C. The low power loss of the UGB10DCTHE3/45 makes it suitable for pulsed applications as well as regular operation.

The working principle of the UGB10DCTHE3/45 is based on the fact that current can only flow in one direction through the diode. This is enabled by the structure of the diode, which has a p-n junction consisting of two layers of semi-conductive material. When a positive voltage is applied across the diode, the electrons in the n-layer are attracted to the p-layer and form a current. When a negative voltage is applied, no current is allowed to flow as the electrons in the p-layer are pushed further away from the n-layer. This can be used to protect against potential reverse current which can damage sensitive electronic components.

The UGB10DCTHE3/45 is a versatile and efficient device, capable of being used in a variety of applications. It is suitable for AC/DC rectification, protection, and power conversion systems. The low forward voltage drop, high thermal characteristics and low power loss of the UGB10DCTHE3/45 make it an ideal choice for use in these applications.

The specific data is subject to PDF, and the above content is for reference

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