Allicdata Part #: | UGB10DCTHE3/45-ND |
Manufacturer Part#: |
UGB10DCTHE3/45 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 200V 5A TO263AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 200V 5A... |
DataSheet: | UGB10DCTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.45486 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Base Part Number: | UGB10DCT |
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The UGB10DCTHE3/45 is a 10A, 400V 4-channel array of power diodes. The UGB10DCTHE3/45 is used in a wide range of applications for both regular and pulsed operation, typically in mains power supply, AC/DC rectification, protection, and power conversion systems. The UGB10DCTHE3/45 provides an extremely low forward voltage drop, excellent thermal characteristics and low power loss.
The UGB10DCTHE3/45 is constructed with 4 initial power diodes, arranged in a single array. This array is then integrated with a single body to form the device, making it suitable for use in a wide range of circuits. The diodes in the UGB10DCTHE3/45 are typically employed in reduce voltage applications, such as power factor correction and power management solutions.
The UGB10DCTHE3/45 has a low forward voltage drop, typically 0.34 volts, allowing the device to reduce the voltage in applications with large voltage drops. The thermal characteristics of the UGB10DCTHE3/45 are excellent, with a maximum junction temperature of 175°C. The low power loss of the UGB10DCTHE3/45 makes it suitable for pulsed applications as well as regular operation.
The working principle of the UGB10DCTHE3/45 is based on the fact that current can only flow in one direction through the diode. This is enabled by the structure of the diode, which has a p-n junction consisting of two layers of semi-conductive material. When a positive voltage is applied across the diode, the electrons in the n-layer are attracted to the p-layer and form a current. When a negative voltage is applied, no current is allowed to flow as the electrons in the p-layer are pushed further away from the n-layer. This can be used to protect against potential reverse current which can damage sensitive electronic components.
The UGB10DCTHE3/45 is a versatile and efficient device, capable of being used in a variety of applications. It is suitable for AC/DC rectification, protection, and power conversion systems. The low forward voltage drop, high thermal characteristics and low power loss of the UGB10DCTHE3/45 make it an ideal choice for use in these applications.
The specific data is subject to PDF, and the above content is for reference
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