Allicdata Part #: | UGF10FCTHE3/45-ND |
Manufacturer Part#: |
UGF10FCTHE3/45 |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 300V 5A ITO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 300V 5A... |
DataSheet: | UGF10FCTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.52536 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io) (per Diode): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 300V |
Operating Temperature - Junction: | -40°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Arrays: UGF10FCTHE3/45 Application Field and Working Principle
The UGF10FCTHE3/45 array is a type of rectifier which has a wide range of applications. It is a 10-phase rectifier which can be used in various applications including DC-DC converters, AC-DC converters, and phase control rectification. As a rectifier, the UGF10FCTHE3/45 array can be used to convert alternating current (AC) power into direct current (DC) power. The device can also be utilized in other types of energy conversion applications.
The UGF10FCTHE3/45 array is made up of 10 individual rectifier diodes in a single package. These diodes are connected together in series and arranged in a pattern that is structured to form a bridge rectifier. In other words, the device acts as a bridge between an alternating current power source and a direct current power source. This arrangement allows the rectifier to simultaneously block current flow in one direction, while permitting current flow in the other direction.
The UGF10FCTHE3/45 utilizes the Schottky barrier diode structure which allows for low forward voltage and fast switching speeds. This structure also offers superior temperature and transient characteristics compared to other rectifier structures. The Schottky barrier diode structure is a type of diode made from metal-semiconductor junctions that can be used to rectify voltage. The UGF10FCTHE3/45 also utilizes a low circuit inductance which ensures that low-frequency transients are minimized.
The working principle behind the UGF10FCTHE3/45 is based on the PN junction diode. A PN junction diode is a semiconductor device that consists of two types of semiconductor materials- an n-type and a p-type- joined together. The diode acts as an electrical switch, and is capable of conducting current in one direction but blocking current in the opposite direction. This is known as rectification.
When AC power is applied to the UGF10FCTHE3/45, the bridge rectifier conducts current only in one direction, allowing the DC output voltage to remain stable and free from fluctuations. The device is capable of handling up to 10-amps of current, making it ideal for a variety of applications including solar energy, power supplies, and motor control.
The UGF10FCTHE3/45 array has a wide range of applications due to its high efficiency, high switching speed, and low forward voltage. It is suitable for a variety of industrial, automotive, and consumer-level applications. The device is also suitable for high-temperature applications, as the Schottky barrier diode structure is able to withstand temperatures up to 150°C.
In summary, the UGF10FCTHE3/45 array is a 10-phase rectifier which utilizes the Schottky barrier diode structure for a low forward voltage and fast switching speeds. The device is capable of converting alternating current power into direct current power, and is suitable for a variety of applications including solar energy, power supplies, motor control, and high-temperature applications. The device utilizes the PN junction diode to rectify voltage, and its low circuit inductance ensures that low-frequency transients are minimized.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
UGF1008G C0G | Taiwan Semic... | 0.64 $ | 1435 | DIODE GEN PURP 600V 10A I... |
UGF1005G C0G | Taiwan Semic... | 0.2 $ | 1000 | DIODE ARRAY GP 300V ITO-2... |
UGF1006G C0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
UGF1004GHC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 200V ITO-2... |
UGF1005GHC0G | Taiwan Semic... | 0.22 $ | 1000 | DIODE ARRAY GP 300V ITO-2... |
UGF10L08G C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 600V ITO-2... |
UGF10L08GA C0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 600V ITO-2... |
UGF1006GHC0G | Taiwan Semic... | 0.25 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
UGF1004G C0G | Taiwan Semic... | 0.27 $ | 1000 | DIODE ARRAY GP 200V ITO-2... |
UGF1606G C0G | Taiwan Semic... | 0.28 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
UGF1606GHC0G | Taiwan Semic... | 0.29 $ | 1000 | DIODE ARRAY GP 400V ITO-2... |
UGF10J C0G | Taiwan Semic... | 0.29 $ | 1000 | DIODE GEN PURP 600V 10A I... |
UGF12JD C0G | Taiwan Semic... | 0.39 $ | 1000 | DIODE GEN PURP 600V 12A I... |
UGF12J C0G | Taiwan Semic... | 0.36 $ | 1000 | DIODE GEN PURP 600V 12A I... |
UGF12JHC0G | Taiwan Semic... | 0.4 $ | 1000 | DIODE GEN PURP 600V 12A I... |
UGF12JDHC0G | Taiwan Semic... | 0.41 $ | 1000 | DIODE GEN PURP 600V 12A I... |
UGF12HT-E3/45 | Vishay Semic... | 0.58 $ | 1000 | DIODE GEN PURP 500V 12A I... |
UGF12JT-E3/45 | Vishay Semic... | 0.58 $ | 1000 | DIODE GEN PURP 600V 12A I... |
UGF12HTHE3/45 | Vishay Semic... | 0.61 $ | 1000 | DIODE GEN PURP 500V 12A I... |
UGF12JTHE3/45 | Vishay Semic... | 0.61 $ | 1000 | DIODE GEN PURP 600V 12A I... |
UGF15HT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 500V 15A I... |
UGF15JT-E3/45 | Vishay Semic... | 0.69 $ | 1000 | DIODE GEN PURP 600V 15A I... |
UGF15HTHE3/45 | Vishay Semic... | 0.73 $ | 1000 | DIODE GEN PURP 500V 15A I... |
UGF15JTHE3/45 | Vishay Semic... | 0.83 $ | 1000 | DIODE GEN PURP 600V 15A I... |
UGF10BCTHE3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
UGF10BCT-E3/45 | Vishay Semic... | 0.48 $ | 1000 | DIODE ARRAY GP 100V 5A IT... |
UGF10DCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 200V 5A IT... |
UGF10DCTHE3/45 | Vishay Semic... | 0.5 $ | 1000 | DIODE ARRAY GP 200V 5A IT... |
UGF10FCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 300V 5A IT... |
UGF10GCT-E3/45 | Vishay Semic... | -- | 1000 | DIODE ARRAY GP 400V 5A IT... |
UGF10FCTHE3/45 | Vishay Semic... | 0.58 $ | 1000 | DIODE ARRAY GP 300V 5A IT... |
UGF10GCTHE3/45 | Vishay Semic... | 0.58 $ | 1000 | DIODE ARRAY GP 400V 5A IT... |
UGF18ACT-E3/45 | Vishay Semic... | 0.59 $ | 1000 | DIODE ARRAY GP 50V 18A IT... |
UGF18BCT-E3/45 | Vishay Semic... | 0.59 $ | 1000 | DIODE ARRAY GP 100V 18A I... |
UGF18CCT-E3/45 | Vishay Semic... | 0.59 $ | 1000 | DIODE ARRAY GP 150V 18A I... |
UGF18DCT-E3/45 | Vishay Semic... | 0.59 $ | 1000 | DIODE ARRAY GP 200V 18A I... |
UGF18ACTHE3/45 | Vishay Semic... | 0.61 $ | 1000 | DIODE ARRAY GP 50V 18A IT... |
UGF18BCTHE3/45 | Vishay Semic... | 0.61 $ | 1000 | DIODE ARRAY GP 100V 18A I... |
UGF18CCTHE3/45 | Vishay Semic... | 0.61 $ | 1000 | DIODE ARRAY GP 150V 18A I... |
UGF18DCTHE3/45 | Vishay Semic... | 0.61 $ | 1000 | DIODE ARRAY GP 200V 18A I... |
DIODE SILICON 650V 17A TO220Diode Array ...
DIODE MODULE 600V 35A SM4Diode Array 1 P...
DIODE MODULE 1.8KV 120A D1Diode Array 1 ...
DIODE ARRAY SCHOTTKY 35V TO220ABDiode Ar...
DIODE MODULE 1.4KV 59ADiode Array 1 Pair...
DIODE ARRAY GP 400V 20A TO3PNDiode Array...