Allicdata Part #: | UGF18BCTHE3/45-ND |
Manufacturer Part#: |
UGF18BCTHE3/45 |
Price: | $ 0.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ARRAY GP 100V 18A ITO220AB |
More Detail: | Diode Array 1 Pair Common Cathode Standard 100V 18... |
DataSheet: | UGF18BCTHE3/45 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.54583 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 18A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | ITO-220AB |
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Diodes are electronic components used to guide electrical current in one direction and prevent it from flowing in the opposite one. Rectifiers are diodes used to convert AC current into DC current, while arrays are sets of diodes combined in one or more elements. UGF18BCTHE3/45 is one of such rectifier array sets. This article will explain the field of application and the working principle of UGF18BCTHE3/45.
Field of Application
UGF18BCTHE3/45 is a rectifier array suitable for a wide range of technical applications. It is used widely in DC power systems, since it turns AC current into DC current with extreme reliability. It is also used in automotive systems, home appliances, electronic equipment, fibre-optic systems, medical devices, and more. UGF18BCTHE3/45 is suitable for any medium-requirement application requiring low voltage and medium current.
Working Principle
UGF18BCTHE3/45 relies upon charge injection to achieve its current-limiting, voltage-regulating, and over-current protection functions. Charge injection is achieved by using the injection of carriers across the dielectric barrier between two or more high-voltage P-channel FET segments and one or more low-voltage N-channel FET sections. This process causes inversion channels between the segments, thus allowing current to flow when necessary and blocking load when required.
Charge injection is also used to limit current. This involves the injection of electrons into the resistor network, thus creating a voltage drop along the network. The voltage drop is proportional to the amount of current passing through the network and prevents current from exceeding the maximum allowable value.
UGF18BCTHE3/45 uses a split gate architecture to ensure consistent and reliable performance. The split gate architecture allows for an external resistor to be connected between the source and drain contact. This resistor increases the gate-source voltage and reduces the drain-source voltage from an overvoltage condition.
Conclusion
The UGF18BCTHE3/45 rectifier array is a reliable and effective DC power system suitable for a variety of technical applications. It uses charge injection and a split gate architecture to regulate voltage, provide over-current protection, and limit current. By using UGF18BCTHE3/45, system designers can achieve their desired DC power system specifications with minimal effort.
The specific data is subject to PDF, and the above content is for reference
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