ULN2003AFWG,O,N,E Discrete Semiconductor Products

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Discontinued at Digi-Key
Transistor Type:	7 NPN Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max):	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 350mA, 2V
Power - Max:	1.25W
Frequency - Transition:	--
Operating Temperature:	-40°C ~ 85°C (TA)
Package / Case:	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	16-SOL
Base Part Number:	ULN200*A

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Transistors - Bipolar (BJT) - ArraysThe ULN2003AFWG,O, N, and E are formed by combining transistors into an array, making it an advanced form of transistor technology. The ULN2003AFWG,O,N, and E consist of several transistors that can be used in a variety of applications and will provide reliable, efficient, and effective performance. Though they are manufactured by different companies, they all work in the same way. A series of small transistors are arranged in an array, or package, and all the connections between the transistors are made by the manufacturer. These small transistors are designed for different specific purposes and each have a different purpose depending upon the application. The ULN2003AFWG,O,N, and E transistors are mainly used in applications that require fast, reliable, and efficient circuit switching. These transistors are also used in applications where the circuit must be switched in a very precise and repeatable manner. These transistors can be used in many applications, including computer, medical and aerospace, and military. The ULN2003AFWG,O,N, and E transistors are made up of three different types of transistors. These are the NPN (negative-positive-negative) transistors, a PNP (positive-negative-positive) transistor, and a Darlington transistor. The NPN devices are the main transistors used in the device, while the PNP transistors are used in the PTF (pin transistor function) configuration, and the Darlington transistor is used to provide enhanced functionality. The working principle of the ULN2003AFWG,O,N, and E transistors is based on the principle of bipolar junction transistors (BJT). This type of transistor consists of three terminals which are the base, collector, and emitter. The base of the transistor is biased using a battery or other external sources. The collector is connected to the output of the circuit. When current passes through the base of the transistor, it switches on the transistors, allowing current to flow from collector to emitter. The ULN2003AFWG,O,N, and E transistors are widely used in a variety of applications. These transistors are often used in switching circuits for radio-frequency (RF) and other high-frequency circuits. This type of transistor is often used in communications systems, such as mobile phones and satellite communications systems, and in various devices, such as digital watches and pagers. The ULN2003AFWG,O,N, and E transistors are also used in audio amplifiers, as they are capable of supplying large amounts of current. The high levels of current allow them to drive strong audio signals over long distances, making them ideal for audio amplifiers and other audio devices. They are also often used in audio cards, such as sound cards and modems. The ULN2003AFWG,O,N, and E transistors are used in a variety of other applications as well, including power control circuits and robotic applications. These transistors are used in varying numbers in such applications, depending on the circuit and the complexity of the system. As such, these transistors are found in a range of electronic devices, from calculators to televisions, and from cars to military equipment. In conclusion, the ULN2003AFWG,O,N, and E transistors are form an advanced transistor array that can be used in a wide variety of applications. These transistors are capable of providing fast, reliable, and efficient switching and are suitable for use in many different applications, from audio amplifiers to power control circuits. Together, these transistors provide a unique and reliable solution to any application that requires a high-performance, yet affordable, transistor array.

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