ULN2003V12DR Allicdata Electronics

ULN2003V12DR Discrete Semiconductor Products

Allicdata Part #:

296-30538-2-ND

Manufacturer Part#:

ULN2003V12DR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: IC DARL TRANS ARRAY 7CH 16SOIC
More Detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 50...
DataSheet: ULN2003V12DR datasheetULN2003V12DR Datasheet/PDF
Quantity: 7500
Stock 7500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: --
Frequency - Transition: --
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: ULN2003V12
Description

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The ULN2003V12DR is a high-voltage, high-current transfer array IC consisting of seven NPN Darlington transistors. It is one of the most popular and powerful Bipolar junction Transistor (BJT) array chips available on the market today, providing exceptional performance in a wide range of applications.

At its core, the ULN2003V12DR contains a total of seven individual NPN Darlington transistors that can provide the user with high-voltage and high-current levels in order to facilitate switching and power transfer capabilities in various applications. The chip\'s specifications are such that it can provide the user with up to 700mA at up to 50V of electrical output capability when operating in both digital and linear modes.

This chip is ideal for powering various devices and applications because of its design. For example, the chip\'s built-in transistors help to minimize the effects of thermal runaway, which can be especially helpful when driving multiple independent devices. Not only that, but these transistors are also perfectly placed in order to ensure the maximum current capability is achieved while the chip\'s output is kept in the linear range.

The ULN2003V12DR is particularly well suited for applications that need a lot of current and voltage output in order to operate. For example, its high-current, high-voltage output capabilities make it ideal for automotive applications, such as the relays used to open and close the doors on cars and trucks. Additionally, the chip\'s current-voltage capability makes it well-suited for other high-current, high-voltage applications, such as driving light emitting diodes, industrial switching and logic control, as well as powering motors and other high power consuming devices.

In terms of its working principle, the ULN2003V12DR is a type of Darlington array, which means that the individual transistors inside the chip are arranged in a \'Darlington\' configuration, which allows for the high current and voltage capabilities that the chip offers. In this configuration, each transistor is connected in series and the current is amplified through them by the time it reaches the output. This allows for the chip to effectively and efficiently control the output level of current and voltage that is needed for use in the various applications for which it is designed.

In conclusion, the ULN2003V12DR is a highly versatile and powerful Bipolar junction Transistor (BJT) array chip that offers an excellent range of outputs for driving various devices. Its seven individual NPN Darlington transistors are perfectly arranged in a Darlington configuration in order to achieve maximum current and voltage capabilities. As such, it is ideal for automotive and industrial applications that require a lot of current and voltage from their components, making it a truly invaluable tool in the world of electronics.

The specific data is subject to PDF, and the above content is for reference

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