ULN2004AIDG4 Allicdata Electronics
Allicdata Part #:

ULN2004AIDG4-ND

Manufacturer Part#:

ULN2004AIDG4

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: IC PWR RELAY 7NPN 1:1 16SOIC
More Detail: Bipolar (BJT) Transistor Array 7 NPN Darlington 50...
DataSheet: ULN2004AIDG4 datasheetULN2004AIDG4 Datasheet/PDF
Quantity: 1000
1160 +: $ 0.21874
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: --
Frequency - Transition: --
Operating Temperature: -40°C ~ 105°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: ULN2004AI
Description

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The ULN2004AIDG4 is a high-performance Darlington array integrated circuit that can be used for a variety of switching and signal processing applications. It is composed of seven independent 2N2222 High Power NPN darlington transistors arranged in the form of an array. This arrangement helps to provide high current and voltage gain. The ULN2004AIDG4 is designed for general purpose operation and can be used for switching, signal processing and amplification.

The ULN2004AIDG4 has a low voltage drop across its outputs and can drive output currents up to 500mA. It can operate at a supply voltage range from 3V to 30V and has an operating temperature range of -55°C to 125°C. The ULN2004AIDG4 is also protected from thermal runaway and has over-temperature protection. It is packaged in a 16-pin DIP (dual in-line package) that is small but provides plenty of space for its required components.

The ULN2004AIDG4 uses Darlington transistors as the basis of its switching and signal processing circuits. When used as a switch, each Darlington transistor operates like an insulated gate BJT (bipolar junction transistor). The transistor has two gates; one is the emitter terminal and the other is the base terminal. When the base terminal of the transistor is activated, current passes through the emitter terminal and is then directed to the collector terminal.

The ULN2004AIDG4 also helps to reduce noise, cross talk and switching errors. This device can be used in applications such as automotive, industrial, communication and consumer electronics. It is also integrated in a wide variety of sensors such as Hall effect, photocells and temperature probes. In addition, it can also be used for signal amplifier applications.

The ULN2004AIDG4 has particularities due to its use of Darlington transistors. It offers high voltage gain and fast switching times. Its arrays work by connecting the emitter of a low-level transistor to the base of a high-level transistor. A voltage is applied to the base of the low-level transistor and current flows from the emitter of the low-level transistor to the collector of the high-level transistor. The current is then amplified and is routed through the emitter of the high-level transistor to the base of the low-level transistor. This process is repeated and the current is amplified in each cycle.

In conclusion, the ULN2004AIDG4 is a high-performance Darlington array integrated circuit that is useful for a variety of applications, from switching and signal processing to amplifying signals. Its arrangement of seven 2N2222 High Power NPN darlington transistors provides high current and voltage gain and can be used for a variety of applications. Its Darlington array design allows for faster switching, high voltage gain, and low noise and crosstalk. This makes the ULN2004AIDG4 an ideal choice for automotive, industrial, communications and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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