
UMH10NTN Discrete Semiconductor Products |
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Allicdata Part #: | UMH10NTNTR-ND |
Manufacturer Part#: |
UMH10NTN |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.06000 |
10 +: | $ 0.05820 |
100 +: | $ 0.05700 |
1000 +: | $ 0.05580 |
10000 +: | $ 0.05400 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Base Part Number: | *MH10 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The UMH10NTN is an advanced type of pre-biased transistor array, ideal for multiple applications such as signal amplification and switching. It is comprised of two integral NPN transistors with one collector to emitter junction being biased at a predetermined voltage. The device offers high levels of electrical and thermal stability, making it suitable for operation in high temperature and high voltage environments.
The UMH10NTN contains two NPN transistors which are connected in parallel and rated for use under different conditions. The first transistor has a collector to emitter voltage of 5V and is suitable for high-temperature, high-voltage applications. The second transistor has a collector to emitter voltage of 10V and is suitable for low-temperature, low-voltage applications.
The UMH10NTN provides many advantages compared to unbuffered transistor arrays. It can be easily configured to provide different voltage levels, and its pre-biased junction ensures added stability and uniformity in the output signal. It is also easier to design due to the lower parts count and smaller board space, reducing overall costs. Moreover, the UMH10NTN\'s ability to switch on and off rapidly makes it highly suitable for controlling dc-dc converters.
In terms of working principles, the UMH10NTN functions by applying a positive base voltage, which in turn causes a current to flow between the collector and the emitter. When a negative voltage is applied to the base, the current between the collector and the emitter is cut off. This action allows for the current that is applied through the second transistor to be diverted and used for other purposes.
The UMH10NTN is a versatile and reliable pre-biased transistor array, capable of delivering excellent results in numerous applications. With its low parts count and stable electrical and thermal characteristics, the device is ideal for switching and signal amplification as well as controlling dc-dc converters. Thus, the UMH10NTN is a cost-effective solution for many applications, providing reliable and long-lasting performance.
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