UMH10NTN Allicdata Electronics

UMH10NTN Discrete Semiconductor Products

Allicdata Part #:

UMH10NTNTR-ND

Manufacturer Part#:

UMH10NTN

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UMH10NTN datasheetUMH10NTN Datasheet/PDF
Quantity: 1000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: *MH10
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The UMH10NTN is an advanced type of pre-biased transistor array, ideal for multiple applications such as signal amplification and switching. It is comprised of two integral NPN transistors with one collector to emitter junction being biased at a predetermined voltage. The device offers high levels of electrical and thermal stability, making it suitable for operation in high temperature and high voltage environments.

The UMH10NTN contains two NPN transistors which are connected in parallel and rated for use under different conditions. The first transistor has a collector to emitter voltage of 5V and is suitable for high-temperature, high-voltage applications. The second transistor has a collector to emitter voltage of 10V and is suitable for low-temperature, low-voltage applications.

The UMH10NTN provides many advantages compared to unbuffered transistor arrays. It can be easily configured to provide different voltage levels, and its pre-biased junction ensures added stability and uniformity in the output signal. It is also easier to design due to the lower parts count and smaller board space, reducing overall costs. Moreover, the UMH10NTN\'s ability to switch on and off rapidly makes it highly suitable for controlling dc-dc converters.

In terms of working principles, the UMH10NTN functions by applying a positive base voltage, which in turn causes a current to flow between the collector and the emitter. When a negative voltage is applied to the base, the current between the collector and the emitter is cut off. This action allows for the current that is applied through the second transistor to be diverted and used for other purposes.

The UMH10NTN is a versatile and reliable pre-biased transistor array, capable of delivering excellent results in numerous applications. With its low parts count and stable electrical and thermal characteristics, the device is ideal for switching and signal amplification as well as controlling dc-dc converters. Thus, the UMH10NTN is a cost-effective solution for many applications, providing reliable and long-lasting performance.

The specific data is subject to PDF, and the above content is for reference

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