UMH1NTN Discrete Semiconductor Products |
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Allicdata Part #: | UMH1NTNTR-ND |
Manufacturer Part#: |
UMH1NTN |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W UMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UMH1NTN Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05358 |
6000 +: | $ 0.05061 |
15000 +: | $ 0.04614 |
30000 +: | $ 0.04316 |
75000 +: | $ 0.03969 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Base Part Number: | *MH1 |
Supplier Device Package: | UMT6 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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With technological advancements and the increasing prevalence of computers and computational systems, the demand for high-speed, low-cost transistors has never been stronger. The UMH1NTN application field and working principle provide a cost-effective, high-speed solution for many types of applications. This article takes a closer look at the UMH1NTN and explains its working principle and application fields.
What is UMH1NTN?
The UMH1NTN is a pre-biased bipolar junction transistor (BJT) array, designed to provide a fast and cost-efficient means of providing power to a variety of devices. The UMH1NTN is capable of efficiently operating at frequencies up to 250 MHz and can handle a wide range of operating voltages. Additionally, the UMH1NTN is designed to be resistant to voltage and temperature transients caused by electromagnetic interference (EMI).
UMH1NTN Working Principle
At its most basic, the UMH1NTN works via the following principle: The UMH1NTN consists of a power transistor called a BJT and a control transistor, which form a complementary pair. This pair is connected to the base of a PNP transistor, which is driven by a voltage bias. The PNP transistor is responsible for controlling the current flow between the BJT and the control transistor. When the voltage bias is applied, the PNP transistor turns on and allows current to flow through the BJT-control transistor pair. This creates a path for current which can be used to power different types of devices.
UMH1NTN Application Fields
The UMH1NTN is commonly used in many different types of applications, such as automotive, communications, consumer devices, industrial and military systems. Specifically, the UMH1NTN can be used to provide adjustable current or voltage outputs, providing speed and cost efficiency for many types of applications. The UMH1NTN is also a popular choice for power amplifiers, power supplies, and other types of analog and digital circuits.
Conclusion
The UMH1NTN is an effective, cost-efficient solution for high-speed applications. Its pre-biased operation and flexibility make it ideal for a wide range of applications. The UMH1NTN is resistant to voltage and temperature transients, offering reliable performance for many years. With its unique design, the UMH1NTN is able to provide power quickly and efficiently, making it a popular choice for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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