UMH1NTN Allicdata Electronics

UMH1NTN Discrete Semiconductor Products

Allicdata Part #:

UMH1NTNTR-ND

Manufacturer Part#:

UMH1NTN

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W UMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UMH1NTN datasheetUMH1NTN Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05358
6000 +: $ 0.05061
15000 +: $ 0.04614
30000 +: $ 0.04316
75000 +: $ 0.03969
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Base Part Number: *MH1
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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With technological advancements and the increasing prevalence of computers and computational systems, the demand for high-speed, low-cost transistors has never been stronger. The UMH1NTN application field and working principle provide a cost-effective, high-speed solution for many types of applications. This article takes a closer look at the UMH1NTN and explains its working principle and application fields.

What is UMH1NTN?

The UMH1NTN is a pre-biased bipolar junction transistor (BJT) array, designed to provide a fast and cost-efficient means of providing power to a variety of devices. The UMH1NTN is capable of efficiently operating at frequencies up to 250 MHz and can handle a wide range of operating voltages. Additionally, the UMH1NTN is designed to be resistant to voltage and temperature transients caused by electromagnetic interference (EMI).

UMH1NTN Working Principle

At its most basic, the UMH1NTN works via the following principle: The UMH1NTN consists of a power transistor called a BJT and a control transistor, which form a complementary pair. This pair is connected to the base of a PNP transistor, which is driven by a voltage bias. The PNP transistor is responsible for controlling the current flow between the BJT and the control transistor. When the voltage bias is applied, the PNP transistor turns on and allows current to flow through the BJT-control transistor pair. This creates a path for current which can be used to power different types of devices.

UMH1NTN Application Fields

The UMH1NTN is commonly used in many different types of applications, such as automotive, communications, consumer devices, industrial and military systems. Specifically, the UMH1NTN can be used to provide adjustable current or voltage outputs, providing speed and cost efficiency for many types of applications. The UMH1NTN is also a popular choice for power amplifiers, power supplies, and other types of analog and digital circuits.

Conclusion

The UMH1NTN is an effective, cost-efficient solution for high-speed applications. Its pre-biased operation and flexibility make it ideal for a wide range of applications. The UMH1NTN is resistant to voltage and temperature transients, offering reliable performance for many years. With its unique design, the UMH1NTN is able to provide power quickly and efficiently, making it a popular choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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