UMH1N-TP Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The UMH1N-TP is a pre-biased, array-type, bipolar junction transistor (BJT) designed specifically for high-speed applications. This device provides the designer with many features not available in single BJT transistors such as higher switching speed and improved current handling capability. The UMH1N-TP is an ideal choice for applications that requires fast switching speeds, low power consumption, and long-term performance.

Application Fields

The UMH1N-TP has a wide range of applications, including power switching, RF switching and amplification, high speed video transmission, and automotive applications. The device is also used in controlling and driving highly inductive loads such as motors and transformers. The UMH1N-TP has been designed to withstand high power transitions and provides a high degree of isolation from thermally and electrically sensitive external systems.

Working Principle

The UMH1N-TP consists of a series of BJTs arranged in an array. The device is pre-biased using a resistor network consisting of resistors connecting the base-emitter junctions of each BJT in the array. This can be thought of as a voltage divider which sets the voltage across each BJT in the array. With proper biasing techniques, the UMH1N-TP can provide a higher switching speed than if the BJTs were operated in a single transistor configuration.

When the UMH1N-TP is switched on, a current is forced through the emitter-base junction of each BJT in the array. This current is used to raise the voltage of the collector-base junction of each BJT. This in turn drives a higher current through the output. Since the current passing through each BJT is much larger than it would be in a single transistor configuration, this results in a higher switching speed and improved current handling capability. The speed of the UMH1N-TP can also be optimized using proper design techniques such as proper transistor sizing and proper biasing.

Conclusion

The UMH1N-TP is an ideal choice for applications requiring high speed switching, low power consumption and long-term performance. The device is also used in controlling and driving highly inductive loads such as motors and transformers. The UMH1N-TP consists of a series of BJTs arranged in an array and is prebiased using a resistor network. This allows for a higher switching speed, improved current handling capability and optimized speed when properly designed and biased.

The specific data is subject to PDF, and the above content is for reference