UP01213G0L Allicdata Electronics

UP01213G0L Discrete Semiconductor Products

Allicdata Part #:

UP01213G0LTR-ND

Manufacturer Part#:

UP01213G0L

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL NPN SSMINI5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UP01213G0L datasheetUP01213G0L Datasheet/PDF
Quantity: 8000
8000 +: $ 0.13104
Stock 8000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F3
Description

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Application Field And Working Principle of UP01213G0L

The UP01213G0L is a transistor array device, mainly employed in a variety of functions such as controlling signals, amplifying and switching signals. The transistor array is considered part of the Bipolar Junction Transistor (BJT) category of transistors, and falls under the Pre-Biased Arrays subset.

The UP01213G0L consists of a total of twenty-four transistors in respective packages. The transistors are arranged in an array of three quads (quadrants), consisting of six transistors in each quad. The first two quads contain two NPN-type transistors and two PNP-type transistors in each, while the third quad contains the remaining four similar transistors.

The working principle of the UP01213G0L transistor array is largely dependent on the configuration of each quad. The first two quads operate under a differential amplifier type scheme, where two transistors in each quad work to amplify the input signal. The negative terminal of the input signal (the base of the transistor) is applied to the base of the two NPN transistors in that quad, while the positive terminal (the collector of the transistor) is applied to the base of the two PNP transistors. The outputs of both quads are then connected to the inputs of the next process. The third quad then applies the Darlington Pair configuration to amplify the second output of the preceding quad.

In addition, the device also employs a pre-biased configuration, where it utilises a voltage division network. This network is responsible for supplying each transistor with the same bias voltage. This allows the entire array to be powered by a single external source, instead of relying on multiple sources. The pre-biased configuration also ensures that each transistor provides consistent performance, regardless of external conditions such as temperature.

The UP01213G0L is an extremely versatile device, and can be used in a wide range of applications. The device can be employed in analogue and digital signal processing, as an input buffer amplifier or a gain enhancing, as an audio amplifier or even as a switching device. The device’s small size, wide array of capabilities, and low power consumption make it an excellent choice for use in many kinds of applications.

Overall, the UP01213G0L belongs to the Bipolar Junction Transistor (BJT) category, and falls in the Pre-Biased Arrays subset. Due to its versatile capabilities, the device can be employed in a plethora of applications, such as those of audio amplifiers and signal processing.

The specific data is subject to PDF, and the above content is for reference

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