UP0121400L Discrete Semiconductor Products |
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Allicdata Part #: | UP0121400LTR-ND |
Manufacturer Part#: |
UP0121400L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL NPN SSMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UP0121400L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-665 |
Supplier Device Package: | SSMini5-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UP0121400L device is a transistor pre-biased array that belongs to the category of bipolar junction transistors (BJT). It is a type of electronic device consisting of multiple transistors that form a semiconductor integrated circuit. This type of device is used in a variety of applications, such as power supplies, audio amplifiers, data converters, and motor controls. Its basic structure consists of a substrate, typically silicon, doped with n-type and p-type areas to form an emitter, base, and collector.
The UP0121400L has a wide range of applications. It is mainly used in signal amplification and rectification, such as in audio equipment, power supplies, and signal-conditioning systems. It is also used to provide signal conditioning in linear circuits, switching circuits, and data converters. Additionally, this device can be used in various other applications, such as RF amplifiers, telecommunications systems, and embedded systems.
The working principle of the UP0121400L is the same as any bipolar transistor array. It consists of two separate transistors connected in parallel. The base of one transistor is connected to its collector, and the other transistor’s base is connected to its emitter. A voltage is supplied to the collectors, and current flows from the emitters to the collectors.
The UP0121400L’s bias is pre-set to provide optimal performance. The base-collector voltage of the device is determined by the emitter-collector voltage. The emitter-collector voltage is the voltage between the emitter and the collector. This voltage can be adjusted to create higher electric fields, yield higher gains, and provide better performance. Additionally, the device can also be used in high-speed applications due to its low capacitance.
The UP0121400L is a reliable and cost-effective pre-biased array. It is able to handle large amounts of high-frequency signals with minimal impact on performance. Its low resistance and good current-limiting characteristics make it an ideal choice for a wide variety of applications. Additionally, its wide range of operating temperature makes it suitable for both indoor and outdoor conditions. It is also suitable for use in automotive and medical devices.
In conclusion, the UP0121400L is an ideal choice for a wide range of applications. Its pre-biased array provides optimal performance and is suitable for use in multiple types of devices. Its low resistance and current-limiting characteristics make the device an ideal choice for signal amplification, rectification, and signal conditioning. Additionally, its wide range of operating temperatures makes it suitable for both indoor and outdoor conditions. It is a reliable and cost-effective pre-biased array that can handle a broad range of high-frequency signals with minimal impact on performance.
The specific data is subject to PDF, and the above content is for reference
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