UP0121M00L Discrete Semiconductor Products |
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Allicdata Part #: | UP0121M00LTR-ND |
Manufacturer Part#: |
UP0121M00L |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL NPN SSMINI5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | UP0121M00L Datasheet/PDF |
Quantity: | 8000 |
8000 +: | $ 0.13104 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-665 |
Supplier Device Package: | SSMini5-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The UP0121M00L application field and working principle is widely used in various transistors, especially in the bipolar transistors-arrays, pre-biased. UP0121M00L is a chip that is designed and manufactured by NXP Semiconductor. It is a power integrated device which combines the wide range of general-purpose operational amplifiers, analog multiplexers/demultiplexers, and a precision differential comparator. UP0121M00L targets automotive, industrial, and consumer applications.
Features and applications
UP0121M00L features include precision temperature measurement, excellent signal-to-noise ratio, low power consumption, high linearity and high reliability. Applications of UP0121M00L include motor control, audio systems, automotive sensors, Li-ion battery management, data acquisition systems, switch-mode power supplies and other precision control applications.
Working principle
UP0121M00L bipolar transistors-arrays, pre-biased uses bipolar junction transistors to amplify and amplify the current of signals. Bipolar junction transistors (BJTs) are basically three-terminal semiconductor devices which allow current to flow between two terminals when a current or voltage is applied to the third terminal. BJTs can be used in either the common-emitter or common-base configuration.
In the common-emitter configuration, the current flows from the collector terminal to the emitter terminal when the input signal is applied to the base terminal. The base of the transistor is the control terminal, and when a small current is applied, it will control a larger current from the collector to the emitter. The current gain of this configuration is known as hFE and is typically around 200 for UP0121M00L. This type of configuration is used for amplifying the voltage or current of a signal.
The common-base configuration is also known as the current gain configuration, as it provides current gain rather than voltage gain. In this configuration, the current flows from the emitter to the collector when the input signal is applied to the base. The current gain of this configuration is known as hoe and is usually around 120 for UP0121M00L. This type of configuration is used for amplifying current signals.
Conclusion
UP0121M00L is a long-standing, reliable and robust power integrated device that uses bipolar junction transistors to amplify and amplify the current of signals. It is widely used in transistors, especially in the bipolar transistors-arrays, pre-biased, and is suitable for a variety of applications, such as motor control, audio systems, automotive sensors, Li-ion battery management, data acquisition systems and switch-mode power supplies. Its features include precision temperature measurement, excellent signal-to-noise ratio, low power consumption, high linearity and high reliability.
The specific data is subject to PDF, and the above content is for reference
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