US1G-13-F Allicdata Electronics

US1G-13-F Discrete Semiconductor Products

Allicdata Part #:

US1G-FDITR-ND

Manufacturer Part#:

US1G-13-F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 400V 1A SMA
More Detail: Diode Standard 400V 1A Surface Mount SMA
DataSheet: US1G-13-F datasheetUS1G-13-F Datasheet/PDF
Quantity: 80000
Stock 80000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C
Base Part Number: US1G
Description

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Diodes - Rectifiers - Single
US1G-13-F application field and working principle

US1G-13-F is a type of single-phase rectifier diode, which is suitable for use in AC and DC power transmission, lightning strike protection, voltage surge, reverse current, and rectification protection.

The US1G-13-F rectifier diode has a maximum peak non-repetitive forward surge current rating of 13A and a voltage rating of 1000V. With a 3A average forward current rating, an 8mm x 8mm plastic SMD package, and low voltage drop, the US1G-13-F rectifier diode enables a cost-effective solution for the majority of rectification needs in a wide range of applications.

In the US1G-13-F, the anode and cathode are connected to two rectifier electrodes. When the voltage is applied, the anode and cathode current flows out from the anode to the cathode and vice versa when reverse voltage is applied. The main difference between the rectifier diode and rectifier bridge is that, in the bridge, the anode and cathode of each diode are connected to opposite DC links, making them able to reverse the current.

To control the currents, the US1G-13-F rectifier diode is equipped with a reverse recovery time of less than 100ns. With this, the US1G-13-F can quickly respond to the changing needs of rectification. The low temperature coefficient and positive temperature coefficient designs of this diode enable it to provide reliable and steady performance both under normal and extreme conditions.

When the voltage reaches the breakdown voltage, the US1G-13-F rectifier diode enters reverse bias and the current through the diode reaches a high value. This is usually followed by an avalanche breakdown where a large current surge can lead to permanent damage to the diode. The US1G-13-F has an avalanche breakdown voltage rating of 950V, which helps ensure a higher level of safety for the diode.

The US1G-13-F rectifier diode offers a high energy conversion efficiency, enabling power line performance improvements with reduced losses. Its low leakage current and avalanche protection improve the stability of power lines, keeping the current levels at a safe level. The US1G-13-F rectifier diode also offers high current ratings, fast switching speed, low power loss, and stable working conditions, making it suitable for various AC to DC and DC to DC power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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