US1G-E3/61T Discrete Semiconductor Products |
|
Allicdata Part #: | US1G-E3/61TGITR-ND |
Manufacturer Part#: |
US1G-E3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO214AC |
More Detail: | Diode Standard 400V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1G-E3/61T Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1G |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes - Rectifiers - Single is a kind of electronic component with a wide range of applications. US1G-E3/61T is one of the most common products in this category. It is a high power, low to medium forward voltage drop rectifier, ideal for many AC to DC applications. This product has a variety of features to meet the demands of modern electronic systems.
The primary purpose of this component is to rectify alternating current. This means that it takes alternating current and converts it into a direct current suitable for powering electronic devices. The US1G-E3/61T has an average forward current of 61A and a maximum reverse voltage of 200 volts. It is made of highly durable material, so it is able to withstand the high voltages and currents that it is exposed to. The component also has a low forward voltage drop, meaning that less power is lost as it passes through it. This makes it very efficient in systems where power efficiency is important. The component also has a wide operating temperature range, which makes it suitable for use in a variety of environments.
The component is composed of two main parts - a diode and a rectifier. The diode is the component responsible for the conversion of alternating current to direct current. It is made of two different materials, which are P N and P P doping. The doping provides the component with its rectification properties, as well as its ability to handle high voltage and current. The P N doping is responsible for allowing current to pass in only one direction, which is why it is called a rectifier. The P P doping is also responsible for regulating the flow of current.
The rectifier component of the US1G-E3/61T is primarily responsible for making sure the current flow is smooth and reliable. It helps reduce the spikes in voltage that can cause damage to electronic components. This component also provides high levels of power efficiency by limiting power lost through the component. This component also helps prevent overloads in the system by regulating the current. This increases system reliability and reduces repair costs.
The US1G-E3/61T offers a wide range of applications in a variety of fields. It is used in devices such as power supplies, battery chargers, AC motor drives, and DC motor control circuits. It is also used in switching power supplies, solar inverters, and LED lighting. The component is also used in automotive systems such as starters, alternators, and fuel pumps.
The US1G-E3/61T is a highly efficient and reliable component. Its combination of durable materials and rectifier properties ensures high levels of power conversion efficiency. Its wide range of applications make it a great choice for a variety of electronic systems. The component also offers excellent protection from overloads and voltage spikes, protecting components from costly repairs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1GFA | ON Semicondu... | 0.08 $ | 12000 | DIODE GEN PURP 400V 1A SO... |
US1GHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1GWF-7 | Diodes Incor... | -- | 15000 | DIODE GEN PURP 400V 1A SO... |
US1G R3G | Taiwan Semic... | -- | 10800 | DIODE GEN PURP 400V 1A DO... |
US1G-TP | Micro Commer... | 0.06 $ | 10000 | DIODE GEN PURP 400V 1A DO... |
US1G-13-F | Diodes Incor... | -- | 80000 | DIODE GEN PURP 400V 1A SM... |
US1G M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1GHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1GHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1G-E3/5AT | Vishay Semic... | 0.07 $ | 7500 | DIODE GEN PURP 400V 1A DO... |
US1GHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1G-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
US1G-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1G-M3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
A2W-TC-WC1 US1GB | Omron Automa... | 218.16 $ | 2 | SWITCH PB MUSHRM GRN WIRE... |
US1GHE3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
US1GHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
US1G-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A SM... |
US1G/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...