US1GHE3/61T Discrete Semiconductor Products |
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Allicdata Part #: | US1GHE3/61TGITR-ND |
Manufacturer Part#: |
US1GHE3/61T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO214AC |
More Detail: | Diode Standard 400V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1GHE3/61T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1G |
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Diodes are vital components of almost all circuit design, but single rectifiers are a particularly important subcategory. The US1GHE3/61T rectifier is a high-efficiency, low-VF, high-speed single schottky diode designed for industrial and consumer applications. The US1GHE3/61T offers excellent thermal stability and avalanche capability and is suitable for either input AC or DC signals. In this article, we will discuss the US1GHE3/61T’s application field and working principle.
Application Field
The US1GHE3/61T is widely used in industrial and consumer applications. Some common applications include:
- Input power protection in electronic circuits
- Rectifying AC or DC signals
- Clamping voltage swings for a specified time to provide over-voltage protection
- Limiting the magnitude of transients
- Generating uniform DC power from rectified AC power
- Automatic voltage regulation
- Power switching control
The US1GHE3/61T is also suitable for use in motor control and power switching applications. It has been designed for use in harsh industrial and consumer environments, with a high temperature junction and surge rating. The US1GHE3/61T has a rated lifetime of up to 20,000 switch cycles.
Working Principle
The US1GHE3/61T is a single schottky diode that uses a minority carrier injection mechanism (MCIM). The MCIM works by controlling the forward current with the use of thermal trapping. This thermal trapping is caused by the movement of carriers from the valence band to the conduction band, which increases the resistance of the device, reducing the current flow. The reverse current, on the other hand, is controlled by the rectifying Schottky barrier.
The US1GHE3/61T implements an optimized design that takes advantage of a variety of parameters for superior edge-rate performance, RON and leakage performance. The device is designed for very low feed-back capacitance, low forward and reverse recovery time for an improved EMI quiet operation.
The US1GHE3/61T features a low leakage current and low reverse voltage characteristics, making it an ideal power source and an efficient rectifier. Additionally, the device has a low clamp voltage and fast reverse recovery, which make it suitable for high-speed applications.
Conclusion
The US1GHE3/61T is a single schottky diode designed for industrial and consumer applications. It has a wide range of applications and offers high-efficiency, low-VF, high-speed operation. The US1GHE3/61T features a minority carrier injection mechanism, which provides excellent thermal stability and avalanche capability. The device also offers excellent edge-rate performance, low leakage current, and low reverse voltage characteristics. The US1GHE3/61T is suitable for input AC or DC signals and can be used in motor control and power switching applications.
The specific data is subject to PDF, and the above content is for reference
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