US6M11TR Allicdata Electronics

US6M11TR Discrete Semiconductor Products

Allicdata Part #:

US6M11TR-ND

Manufacturer Part#:

US6M11TR

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 20V/12V TUMT6
More Detail: Mosfet Array N and P-Channel 20V, 12V 1.5A, 1.3A 1...
DataSheet: US6M11TR datasheetUS6M11TR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.14150
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Base Part Number: *M11
Supplier Device Package: UMT6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1.3A
Drain to Source Voltage (Vdss): 20V, 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The US6M11TR is a highly stable, ultra low resistance MOSFET array transistor. It offers excellent performance and reliability in high-temperature applications, due to its unique design and integrated cooling systems. The US6M11TR is an ideal choice for use in switch-mode power supplies, switching amplifiers, and advanced power management systems. In this article, we will discuss the application field, working principle, and advantages of the US6M11TR.

Application Field

The US6M11TR generally has multiple applications and is often used in high-power applications, such as high-speed switch-mode power supplies, automotive electronics, low-voltage converters, and advanced power management systems. It is also suitable for use in solar cells, voltage regulators, and high-end audio signal amplifiers. The US6M11TR also has excellent thermal performance, making it ideal for use in environments that require high speed and reliable switching.

Working Principle

The US6M11TR is a two-pin MOSFET array transistor. It works on the principle of the enhancement type MOSFETs (metal-oxide-semiconductor field-effect transistors). This type of transistor consists of an insulated gate that can be connected to a positive voltage source and a drain-source region. A high electric field is formed by the gate and drain when the gate-to-source voltage is above a certain level. This high electric field modulates the flow of electrons between the drain and the source, thus enabling precise control of current and voltage.

The US6M11TR is especially suited for applications requiring ultra low resistance and high temperature stability. It has a two-pin design, and the MOSFETs are integrated with a cooling system for improved performance. It also has an adjustable high-side current limit, which is beneficial for applications requiring precise control of voltage and current. Furthermore, the US6M11TR has integrated ESD protection, meaning the device is better protected from high electrostatic electricity.

Advantages

The US6M11TR offers various advantages, such as excellent thermal performance and integrated cooling. Thanks to its 2-pin design, the US6M11TR enables tight control of voltage and current while consuming low power, making it suitable for switch-mode power supplies and other low-power applications. Furthermore, it is highly reliable and designed to work in high temperature applications. Lastly, it also has an adjustable current limit, which is helpful in fine-tuning the device performance.

In conclusion, the US6M11TR is a highly stable, ultra low resistance MOSFET array transistor. It offers excellent performance and reliability in high-temperature applications thanks to its unique design and integrated cooling systems. It is an ideal choice for use in switch-mode power supplies, switching amplifiers, and advanced power management systems. It also offers various advantages, such as excellent thermal performance, integrated cooling, low power consumption, and adjustable current limit.

The specific data is subject to PDF, and the above content is for reference

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