US6M2TR Discrete Semiconductor Products |
|
Allicdata Part #: | US6M2TR-ND |
Manufacturer Part#: |
US6M2TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V/20V TUMT6 |
More Detail: | Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W ... |
DataSheet: | US6M2TR Datasheet/PDF |
Quantity: | 39000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V, 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A, 1A |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 10V |
Power - Max: | 1W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | TUMT6 |
Base Part Number: | *M2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
- US6M2TR Application Field and Working Principle
US6M2TR transistors, also known as ultra Schottky MOSFET transistors, are commonly used in high-current-handling circuits, especially in power applications.
US6M2TR transistors are also used in applications that require very low total gate charge capabilities. Some of these applications include current-mode control, low-dropout linear regulator, and voltage and memory cell drivers.
US6M2TR has a wide variety of applications including power supply devices, DC-DC converters, and various other electronic devices.
US6M2TR transistors are usually used in arrays of transistors, which are integrated in a single package. These arrays are used in various power management applications including power stages, voltage regulators, and buck-boost converters.
- Working Principle
The US6M2TR transistors come with an integrated power MOSFET and Schottky diode. This allows them to operate in either a linear or a saturated mode, and at a wide range of drain-source voltages.
The power MOSFET is switched by the internal charge transfer switch, which induces the avalanche effect for better operation. The Schottky diode effectively prevents reverse current.
US6M2TR transistors have a low on-resistance, low gate-capacitance, and low gate-charge, which makes them ideal for high-speed switching applications.
The switching capability of the US6M2TR transistors is increased by the diode turn-on characteristic and improved trapping effect.
The Schottky diode has improved reverse recovery characteristic and lower recovery time compared to other types of diodes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...