US6M2TR Allicdata Electronics

US6M2TR Discrete Semiconductor Products

Allicdata Part #:

US6M2TR-ND

Manufacturer Part#:

US6M2TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 30V/20V TUMT6
More Detail: Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W ...
DataSheet: US6M2TR datasheetUS6M2TR Datasheet/PDF
Quantity: 39000
Stock 39000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6
Base Part Number: *M2
Description

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  • US6M2TR Application Field and Working Principle
    • US6M2TR transistors, also known as ultra Schottky MOSFET transistors, are commonly used in high-current-handling circuits, especially in power applications.

    • US6M2TR transistors are also used in applications that require very low total gate charge capabilities. Some of these applications include current-mode control, low-dropout linear regulator, and voltage and memory cell drivers.

    • US6M2TR has a wide variety of applications including power supply devices, DC-DC converters, and various other electronic devices.

    • US6M2TR transistors are usually used in arrays of transistors, which are integrated in a single package. These arrays are used in various power management applications including power stages, voltage regulators, and buck-boost converters.

    • Working Principle
      • The US6M2TR transistors come with an integrated power MOSFET and Schottky diode. This allows them to operate in either a linear or a saturated mode, and at a wide range of drain-source voltages.

      • The power MOSFET is switched by the internal charge transfer switch, which induces the avalanche effect for better operation. The Schottky diode effectively prevents reverse current.

      • US6M2TR transistors have a low on-resistance, low gate-capacitance, and low gate-charge, which makes them ideal for high-speed switching applications.

      • The switching capability of the US6M2TR transistors is increased by the diode turn-on characteristic and improved trapping effect.

      • The Schottky diode has improved reverse recovery characteristic and lower recovery time compared to other types of diodes.

The specific data is subject to PDF, and the above content is for reference

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