US6M2GTR Discrete Semiconductor Products |
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Allicdata Part #: | US6M2GTR-ND |
Manufacturer Part#: |
US6M2GTR |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | 2.5V DRIVE NCH+PCH MOSFET, 6 PIN |
More Detail: | Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W ... |
DataSheet: | US6M2GTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.16620 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V, 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A, 1A |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA, 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 4.5V, 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 10V, 150pF @ 10V |
Power - Max: | 1W |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD, Flat Leads |
Supplier Device Package: | TUMT6 |
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US6M2GTR is an integrated circuit with an array of MOSFETs. It is an improved version of the traditional US6 MOSFET array, designed to offer superior performance and reliability. The US6M2GTR is designed for use in a variety of applications, including power management, battery protection, and electromechanical actuation applications. It has gained popularity due to its combination of low on-resistance and fast switching characteristics.
The US6M2GTR is composed of two arrays of four MOSFETs each. Each MOSFET array is composed of four individually controllable MOSFETs, each one capable of connecting or disconnecting two terminals. The MOSFET array can be used in a variety of ways, mainly by either connecting two different voltages together (such as a battery and a load) or by turning a load on and off.
The US6M2GTR has several key advantages over its predecessor, the US6. Firstly, the US6M2GTR has significantly lower on-state resistance, meaning that it can deliver higher currents at lower voltages. In addition, it has a faster switching speed, which is important in applications that require fast response times, such as in battery protection or actuation applications. Finally, it has better reliability than the US6 due to improved electrostatic discharge protection and improved thermal performance.
The US6M2GTR is a versatile device, that can be used in a variety of applications. In power management applications, it is often used as a high-current switch to connect or disconnect loads from a power supply. It can also be used in battery protection circuits to protect against over-voltage or over-current conditions. It can even be used in electromechanical actuation applications, where it is used to control the movement of motors or other mechanical components.
The US6M2GTR is designed to be highly reliable and easy to use. It is designed with a wide operating temperature range, and can be used in a variety of harsh environments. It also features excellent ESD and surge protection, as well as short circuit protection, making it well suited for highly demanding applications.
The working principle of the US6M2GTR is based on the use of two separate MOSFET arrays, each of which can be independently controlled. Each array consists of four MOSFETs. The first array is connected in series, so that a single voltage can be applied across all of the transistors and the current is shared equally between them. The second array is connected in parallel, allowing each transistor to be independently controlled, allowing the user to switch on or off any of the four MOSFETs.
The US6M2GTR offers excellent performance and reliability for a wide range of applications. It is designed to be easy to use and highly robust, making it well suited for a variety of applications. With its low on-state resistance, fast switching speed, and improved ESD and surge protection, the US6M2GTR is a great choice for power management, battery protection, and electromechanical actuation applications.
The specific data is subject to PDF, and the above content is for reference
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