VEC2415-TL-W-Z Allicdata Electronics
Allicdata Part #:

VEC2415-TL-W-Z-ND

Manufacturer Part#:

VEC2415-TL-W-Z

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET NCH+NCH 4V DRIVE SERIES
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 3A (Ta) Surfa...
DataSheet: VEC2415-TL-W-Z datasheetVEC2415-TL-W-Z Datasheet/PDF
Quantity: 1000
3000 +: $ 0.20958
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8
Description

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The VEC2415-TL-W-Z is a part of a series of high-performance, low-voltage, power MOSFET arrays, designed to control and deliver power in high-performance, low-voltage, miniature applications. This MOSFET array is designed to provide unparalleled performance through electric field containment silicon technology, which enables multiple paralleled transistors to operate at truly linear current sharing and can provide levels of current not achievable with traditional E-MOSFETS.

The VEC2415-TL-W-Z is a power MOSFET array consisting of one hundred and twenty (120) high-voltage MOSFETs in a compact, low-profile chip format with built-in self-protection features. It features an ultra-low combined on-resistance of ≤ 0.400Ω, an ultra-high combined power dissipation of up to 800W/s, and a guaranteed thermal shutdown temperature of 170°C.

The device is capable of switching high voltages in a very small package, with the minimum off-state breakdown voltage of 45V and maximum rds(on) of 0.400Ω. It is ideal for applications that require high efficiency, superior performance, and cost-effectiveness. The VEC2415-TL-W-Z provides a high-performance, low-power solution in a very small package.

The VEC2415-TL-W-Z application field mainly covers: motor control, including inverters and other electronic motors; high-power solar energy converters; automotive power semiconductor applications such as headlamps, central locks and window lifters; multimedia projection systems; and many more.

The working principle of the VEC2415-TL-W-Z can be summarized as follows. It uses a unique Electric Field Containment Silicon (ECS) approach to provide superior performance when multiple devices are used together. It relies on a substrate doping technique to ensure that each transistor can withstand higher voltages and still maintain a low on-resistance. The internal ECS contains individual MOSFETs that are multi-connected for increased current capacity.

In operation, the device works by taking the input voltage and current and switching the output based on the required frequency. The internal ECS helps to provide linear current sharing amongst the channels, allowing for higher current ratings and improved overall performance. The output voltage is also filtered to reduce the noise that may be introduced due to switching of the device.

With its combination of high voltage, low on-resistance, and superior thermal protection, the VEC2415-TL-W-Z is a high performance MOSFET array that can be used in a variety of applications requiring high efficiency, superior performance, and cost-effectiveness. Its Electric Field Containment Silicon technology is a major breakthrough in the industry, allowing for higher current ratings and improved linear current sharing.

The specific data is subject to PDF, and the above content is for reference

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