VEC2616-TL-W Discrete Semiconductor Products |
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Allicdata Part #: | VEC2616-TL-WOSTR-ND |
Manufacturer Part#: |
VEC2616-TL-W |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 60V 3A/2.5A VEC8 |
More Detail: | Mosfet Array N and P-Channel 60V 3A, 2.5A 1W Surfa... |
DataSheet: | VEC2616-TL-W Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.18909 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3A, 2.5A |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 505pF @ 20V |
Power - Max: | 1W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | SOT-28FL/VEC8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VEC2616-TL-W is a voltage controlled electronic component, specifically, an electrical field-effect transistor (FET). As a type of array FET, it is used in a wide variety of applications, including in regulating electric current in circuits and motor controls, as digital switches in logic systems, and in transistors for amplifying power in audio or digital signals. Its specific form makes it an excellent choice for devices that require high frequency operation and high levels of temperature stability.
An FET works on the principle of controlled electric field. The VEC2616-TL-W is a n-type FET, meaning that its working principle involves electrons flowing out of a negative (n-type) material, through the semiconductor channel, and into a positively charged source. The current at the source is modulated by a Voltage given to the gate terminal. The amount of current flowing through the channel is proportional to the Voltage between source and gate.
Because of its field-effect nature, the VEC2616-TL-W offers precise control over the current flow. The gate terminal allows for adjustable Voltage settings, which can control the current in the semiconductor channel. This precise control makes the VEC2616-TL-W perfect for precision applications, such as analog and digital switching, motor control, audio signal amplification, and other electrically demanding operations. As the Voltage supplied to the gate is modified, the net current flow changes, allowing for accurate low-frequency signal manipulation. This also makes it excellent for use in a variety of digital signal processing applications.
The VEC2616-TL-W\'s design also allows for extremely high-frequency operation. It is designed with a large-area semiconductor channel that has a low drain-source capacitance and low gate-source capacitance. This feature reduces crystal loading and makes it perfect for applications that require high-speed switching, such as in computer chips and microprocessors. This large-area design allows for higher currents and higher frequency operation, coupled with increased temperature stability, making the VEC2616-TL-W a great choice for more demanding operations.
In addition to its unique design, the VEC2616-TL-W also provides excellent power dissipation. Its internal design dissipates heat quickly, ensuring that it can operate reliably at higher temperatures. This feature helps to avoid easily reaching a point of thermal runaway, resulting in less wasted power and reduced risk of damage to the device. The FET also contains a number of protection features, so that it has increased immunity to noise, for example lightning or electrostatic discharge.
The VEC2616-TL-W is a versatile and powerful electrical component, used in a variety of applications. Its field-effect nature allows for precise current control and high-frequency operation, making it perfect for digital switching and motor control. Its large-area design and protection features result in greater temperature stability and noise immunity, while its power dissipation properties help avoid easily reaching a point of thermal runaway. This makes it an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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