VEC2616-TL-W-Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	3A, 2.5A
Rds On (Max) @ Id, Vgs:	80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	505pF @ 20V
Power - Max:	1W
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	SOT-28FL/VEC8

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The VEC2616-TL-W-Z is a power module designed for use in a variety of applications. It is a two-terminal common gate array that combines an integrated power MOSFET and an integrated power Schottky diode in one package. The combination of these two devices provides high-power switching performance in a compact size.The VEC2616-TL-W-Z features a number of benefits that make it a popular choice for many applications. The device is capable of delivering up to 30 A continuous drain current and 30 A pulsed drain current with a total on-state resistance of 0.20 Ohms. The module also comes with integrated power MOSFET protection circuitry, allowing the user to easily control the device’s temperature and over-current protection capabilities. Furthermore, the module is designed with a low parasitic inductance, resulting in improved efficiency and reduced conduction losses.In terms of applications, the VEC2616-TL-W-Z is used in a variety of power electronics applications, such as DC-DC converters, battery chargers, solar inverters, and power factor correction circuits. In general, these applications require high-power, reliable switching performance in an efficient form factor. The VEC2616-TL-W-Z is capable of delivering this performance and more, making it an attractive choice for many power electronics applications.When it comes to its mode of operation, the VEC2616-TL-W-Z uses a common gate array to combine multiple MOSFETs and Schottky diodes in one package. This array provides two shared junctions, one between the source and drain of the MOSFET, and one between the source and drain of the Schottky diode. In normal operation, the MOSFET is on while the Schottky diode is off, allowing current to flow through the device. When the voltage across the drain and source changes, the MOSFET will turn off while the Schottky diode turns on. This allows the device to act as a power switch and also provides protection against over- and under-voltages, allowing the user to easily control the device’s temperature and over-current protection capabilities.Overall, the VEC2616-TL-W-Z is a compact, efficient power module that is capable of providing reliable, high-power switching performance in a wide range of applications. With its integrated power MOSFET protection circuitry, low parasitic inductance, and wide range of features, the VEC2616-TL-W-Z is an excellent choice for many power electronics applications.

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