VEMD5110X01 Sensors, Transducers

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Wavelength:	940nm
Color - Enhanced:	--
Spectral Range:	790nm ~ 1050nm
Diode Type:	PIN
Responsivity @ nm:	--
Response Time:	100ns
Voltage - DC Reverse (Vr) (Max):	20V
Current - Dark (Typ):	2nA
Active Area:	7.5mm²
Viewing Angle:	65°
Operating Temperature:	-40°C ~ 110°C
Mounting Type:	Surface Mount

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VEMD5110X01 is an optical sensor belonging to the family of photodiodes, used primarily for the detection of infrared radiation in the wavelength region of 860nm to 960nm. It is an ideal device for applications in the fields of automobile parking assistance systems, homing devices, medical equipment, industry inspection and control and household appliances.The VEMD5110X01 photodiode is a surface-mount device built with an active area of 0.69mm2 and a total area of 4.16mm2, including the lead frame and contacts. The active area contains six vertical epitaxial anodes and six vertical cathodes, each with a below surface P+ region to improve the response to infrared radiation. The P+ regions and contacts are covered by a widely transparent window.The VEMD5110X01 device operates on the same principle as other photodiodes: When light, comprised of energy photons, is incident on the diode, electrons in the active region are excited from the valence to the conduction band. When a bias voltage is applied across the photodiode, the excited electrons are depleted from the active region, resulting in a photocurrent flow. Higher intensity light leads to higher current flow and, in this way, the amount of light incident upon the device can be measured by measuring the photocurrent.The bias voltage of the VEMD5110X01 can be adjusted to suit the application by connecting a resistor in series with the device to adjust the bias current, which affects the photocurrent. A voltage of approximately 1V is ideal, though the device can be operated at higher voltages up to 50V.Unlike devices such as phototransistors, photodiodes require no external circuitry for light detection, making them simpler and easier to use. This is beneficial in cost-sensitive applications where the detection range must be between 860nm and 960nm. The device also requires far less power than traditional photoresistors, and its low dark current consumption makes it ideal for use in applications where power is limited.In terms of sensitivity, the VEMD5110X01 is said to reach an impressive peak quantum efficiency (QE) of 0.96, making it one of the most sensitive devices of its kind. To further expand the device’s sensitivity, on-chip resistors can be used to adjust the bias current for different levels of light intensity.The VEMD5110X01 is an extremely versatile device, and its wide range of applications make it the ideal solution for many applications. From automobile parking assistance systems and homing devices, to medical equipment, industry inspection and control, and even household appliances, the VEMD5110X01 can be used virtually anywhere. Its low power consumption and large active area make it an incredibly reliable device, ideal for any application which requires precise and reliable detection of infrared radiation.

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