VEMD5510C-GS15

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Optical sensors are very important and increasingly used in the present world, as they provide accurate measurements. The VEMD5510C-GS15 is a type of optical sensor from the photodiodes family. Its application field and working principle are described in this article.

The VEMD5510C-GS15 is a vertical-cavity surface-emitting laser photodiode specifically designed for use in short wavelength range applications such as 850 nm and 940 nm. Due to its reduced dimension of 3x3 mm, its compatibility with standard pick-and-place operations and large operating temperature of -40°C up to +85°C makes this device reliable for a large variety of applications.

The main applications of the VEMD5510C-GS15 are in telecommunication, optical communication networks, optical time-domain reflectometers and fibre sensors. It is suitable for surveillance applications such as barcode readers, logotype scanners, fibreoptic video cameras and industrial video cameras. Also, it is used in measuring devices for medical imaging and monitoring, 3D scanners, portable fibreoptic inspection systems and in automotive rangefinders or security/safety systems.

The core of VEMD5510C-GS15 is the Photodiode, which is a semiconductor device which converts light into electricity. The principle of operation of this device is based on the photovoltaic effect. When light is incident upon a semiconductor material, an electric potential is generated. A photodiode is made of a semiconductor, similar to those in solar cells, in which the light generates a current that can be measured. The semiconductors used in photodiodes most often belong to the family of the Group III-V compounds. When these types of semiconductors are exposed to light, their electrons absorb the photons and become excited and accelerated, creating an electric current. The magnitude of the current is proportional to the intensity of the light.

The VEMD5510C-GS15 employs a monolithic HBT integrated circuit for bias control and laser protection, allowing for stable operation over temperature and voltage variation. The device operates in forward bias mode, which means that the electrons and holes recombine in the junction and produce current. A built-in photodiode monitor in the device ensures the laser control signal accuracy with different optical input powers. The embedded in this device modulator control circuit allows a wide dynamic range from 10µW to 1mW and response time of 10ns.

In conclusion, the VEMD5510C-GS15 is an important optical sensor designed for applications in the short wavelength range. Its significant advantages such as small size, high operating temperature and compatibility with standard pick-and-place operations make it reliable and suitable for numerous applications. Its principle of operation is based on the photovoltaic effect, where the light absorbed by the semiconductor device generates an electric current.

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