Allicdata Part #: | VI20120S-M3/4W-ND |
Manufacturer Part#: |
VI20120S-M3/4W |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE SCHOTTKY 20A 120V TO-262AA |
More Detail: | Diode Schottky 120V 20A Through Hole TO-262AA |
DataSheet: | VI20120S-M3/4W Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.36515 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.12V @ 20A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 300µA @ 120V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262AA |
Operating Temperature - Junction: | -40°C ~ 150°C |
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VI20120S-M3/4W Application Field and Working Principle
VI20120S-M3/4W is a type of rectifier diode that finds a wide range of applications in electrical and electronics systems. This type of diode has different specialty features and properties making it suitable for numerous industrial and consumer applications. This article will focus on the application fields and working principle of the VI20120S-M3/4W diode.
Applicatino Field of VI20120S-M3/4W Rectifier Diode
The VI20120S-M3/4W rectifier diode can be used in low-power applications, such as in the circuits controlling RF receivers, magnetic core memories, local oscillator circuits, burst regeneration circuits or power supplies. It is also widely employed in the driver stages of bipolar transistors, in loudspeakers and circuits dealing with data capture and storage. This type of diode can be used in numerous consumer devices such as TVs, radios, amplifiers, microcomputers, and calculators.
Working Principle of VI20120S-M3/4W Rectifier Diode
The VI20120S-M3/4W rectifier diode is a semiconductor of gallium arsenide. This type of diode uses a current junction to conduct a forward current, meaning that the electric current enters through the p-type semiconductor and flows into the n-type semiconductor, allowing the positive voltage level to take charge. In its reverse-biased phase, the diode prevents the current by blocking the connection.
The VI20120S-M3/4W rectifier diode usually works within the 0-20 V DC voltage range. This type of diode can handle maximum power dissipation up to 5 W, providing high efficiency and reliability. Additionally, the VI20120S-M3/4W rectifier diode offers an ultra-fast switching speed, switching between the conducting and the non-conducting state within the range of 20 nanoseconds, which makes it suitable for high-frequency applications. That is why it is often used in high-speed circuits.
Conclusion
The VI20120S-M3/4W is a type of rectifier diode that has a wide range of applications in electrical and electronics systems. This diode offers high efficiency, reliability, and an ultra-fast switching speed, which makes it suitable for a large variety of low-power and high-frequency applications. That is why it can be found in numerous consumer and industrial devices, from TVs and radios to power supplies and local oscillator circuits.
The specific data is subject to PDF, and the above content is for reference
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