VI20150CHM3/4W Allicdata Electronics
Allicdata Part #:

VI20150CHM3/4W-ND

Manufacturer Part#:

VI20150CHM3/4W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 20A 150V TO-262AA
More Detail: Diode Array 1 Pair Common Cathode Schottky 150V 10...
DataSheet: VI20150CHM3/4W datasheetVI20150CHM3/4W Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101, TMBS®
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 150µA @ 150V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262AA
Description

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Application Field and Working Principle of VI20150CHM3/4W

The VI20150CHM3/4W is a Silicon Carbide MOSFET based diode that is used as an alternative to conventional Silicon Schottky rectifiers. It is also a member of a family of rectifiers known as Silicon Carbide Schottky (SiC-S) diodes.The application field of the VI20150CHM3/4W is typically used for high efficiency rectification applications for industrial and automotive uses. The higher switching and blocking performance of the MOSFET core enables a much faster power transfer. It also has a higher reverse breakdown voltage and extremely low thermal resistance and functioning temperature, which makes it ideal for high power applications, as it can provide a wider operational temperature range.The working principle of the VI20150CHM3/4W is based on the principle of silicon MOSFET technology. In traditional MOSFET based diodes, the carriers of the negativity carry charge can only be released by applying a specific voltage. The VI20150CHM3/4W applies the same principle but uses Silicon Carbide (SiC) as a material to provide superior conduction capability and fast switching speed, allowing increased power and efficiency to be dissipated across a wider temperature range of operation. When a positive voltage is applied on the anode of the VI20150CHM3/4W, it will immediately allow the current to flow through it and act as a diode bridge rectifier, allowing the positive voltage to flow freely in one direction while blocking the negative voltage in the opposite direction. This allows the rectification of an alternating current (AC) signal into a direct current (DC) signal, and the rectification is done efficiently and at high speeds. The VI20150CHM3/4W also has a high reverse breakdown voltage of 150 V, which means that currents flowing in the opposite direction will be blocked unless the voltage in the device is kept within the 150 V range. This makes the device more reliable and reliable for high power applications. This device also has a very low thermal resistance of 0.075oC/W, which ensures that the device works correctly with minimal heat generation. This further allows the device to be used in high temperature applications and helps in the improved efficiency of the overall system. Overall, the VI20150CHM3/4W is a highly efficient and reliable alternative to conventional silicon Schottky rectifiers, and is ideal for use in industrial and automotive uses. It offers superior performance, high reliability, and low thermal resistance, making it a perfect fit for applications that require high power and fast switching.

The specific data is subject to PDF, and the above content is for reference

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