VI20120SGHM3/4W

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VI20120SGHM3/4W diodes are designed for high-efficiency rectification applications such as TV, audio and PCB pre-regulators. They have very low forward voltage drop and are highly reliable. These devices are suitable for applications such as freewheel diodes, active inrush couplers, and soft start applications.

The most important feature of these diodes is their low forward voltage drop. This characteristic allows them to dissipate less energy during each forward conduction cycle and therefore maintain efficiency. In addition, these diodes are very reliable and operate at high temperatures. The maximum operating temperature is 150°C and its storage temperature range is -40°C to +150°C.

Another benefit of VI20120SGHM3/4W rectifier diodes is their ability to operate in reverse-biased conditions. This is referred to as the Zener effect, which is the process of allowing a current to flow when the applied voltage is greater than the reverse breakdown voltage. This can be beneficial for protecting against voltage spikes, surges, and power cross conditions.

VI20120SGHM3/4W rectifier diodes also feature high power dissipation and high surge capability. The power dissipation is 100W at +85°C and the surge capability is a maximum of 1.2A. It is important to note that the surge current rating is only valid for 10 adds of 300 µs, and is not recommended for continual operation.

The working principle of these rectifier diodes is based on the basic principles of the p-n junction. The p-n junction is formed by the junction of two semiconductor pieces, one containing a majority of p-type carriers, and the other containing a majority of n-type carriers. As voltage is applied to the diode, carriers from the n-type material move to the p-type region, forming a potential barrier that prevents further current flow. This is referred to as the “reverse breakdown voltage”, or the point at which the diode starts to conduct a current in the reverse direction.

In the forward direction, VI20120SGHM3/4W rectifier diodes are designed to reduce the voltage drop. This is achieved by utilizing a bipolar construction, in which a PNP transistor and two NPN transistors are interconnected to form a single power-junction device. The purpose of the transistors is to reduce the voltage drop between the anode and the cathode. This is done by using a collector-base junction in the PNP transistor and the anode-collector junction in the NPN transistors.

VI20120SGHM3/4W rectifier diodes have a wide range of application fields due to their high efficiency, reliability, and low forward voltage drop. These diodes can be used in a variety of applications such as switching regulators, (DC/DC converters, AC/DC converters) uninterruptible power supplies, motor drives and other DC-DC switching applications. In addition, they are also used in frequency synthesizers, voltage regulators, and rectifiers.

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