VI20120SG-M3/4W

VI20120SG-M3/4W Application Field and Working Principle

Description: VI20120SG-M3/4W is a fast recovery rectifier with a built-in anti-parallel diode. It is capable of operating at high temperatures up to +175℃, and is available in a range of packages. It is designed for use in power electronic applications such as switch mode power supplies and electronic ballast.

Application Field

VI20120SG-M3/4W is available in both molded and open-frame package formats and is suitable for a variety of PC power supplies, LED lighting, motor speed control, solar inverters, ac-dc converters, and industrial applications.

Working Principle

The functioning of a VI20120SG-M3/4W rectifier is based on four principles: PN junction diode, forward bias current conduction, reverse bias voltage blocking, and current gain.

• PN Junction Diode: The PN junction diode is a two terminal device formed by joining two semiconductor materials, one with excess holes (P-type) and one with excess electrons (N-type). When current flows through the device, the voltage across the diode is proportional to the current.
• Forward Bias Current Conduction: When the anode is made more positive than the cathode, a small increase in voltage creates a larger increase in current. This is known as the forward conduction. This current conduction occurs when the voltage is between 0.3V and 0.7 V for typical silicon diodes.
• Reverse Bias Voltage Blocking: When the anode is made negative with respect to the cathode, the current flow through the diode is blocked and the diode will not function. This is known as the reverse bias blocking, and it is practical to use the diode as a switch.
• Current Gain: The current gain is the ratio of the output current to the forward current. A high current gain is something that a design engineer can use to advantage in order to minimize the overall expenses in designing and constructing the electrical circuit.

The VI20120SG-M3/4W rectifier is used in a wide variety of applications and is an excellent choice for power electronic design needs. Its ability to handle high temperature operating conditions and its low forward voltage drop makes it an ideal device for those applications where efficiency and performance are essential.