VMMK-1225-BLKG

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The VMMK-1225-BLKG is an RF Mosfet device with a range of applications and working principles.

This Mosfet device is a voltage-controlled field effect transistor that is designed for radio frequency (RF) applications. It features a VGS varying from -4V to +4V, drain current of 10A, and total gate charge of 11nC. With excellent harmonic performance, it is suitable for mobile and wireless communications, as well as broadcast and media applications.

The working principle of the device is based on the idea of a voltage-dependent series of semiconductor devices. A gate voltage is applied to the source and drain terminals, which varies as a function of the current through the device. This voltage is then used to control the amount of current flowing through the Mosfet. The larger the voltage, the greater the current that can flow through the device.

The VMMK-1225-BLKG can be used in a number of applications. It can be used in RF amplifiers and switches, as well as in high power switching applications that require low voltage operations, such as mobile and wireless base station services. Additionally, it is suitable for use in automotive, industrial and consumer electronics.

The VMMK-1225-BLKG has an on-resistance of 0.4 ohm and its total gate charge is only 11nC. With an operating frequency of 30MHz - 3GHz and an input voltage of -4V to +4V, it is suitable for circuit designs that require high system performance in a wide operating temperature range. It also includes a high-speed switching time of 2μs and a low threshold voltage of 0.8V.

In summary, the VMMK-1225-BLKG is a highly reliable RF Mosfet device designed for a range of applications. It features a voltage-dependent series of semiconductor devices that enables the device to work effectively in a wide range of operating conditions. It can be used in RF amplifiers, high power switching applications, automotive and consumer electronics as well as broadcast and media applications.

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