VMMK-1225-TR1G Discrete Semiconductor Products

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The VMMK-1225-TR1G is a radio frequency (RF) MOSFET device that utilizes a unique structure and process, which allows it to be used in a wide range of applications. It is a general-purpose device that can be used for switching, amplifier, frequency control, and low voltage power supplies.

The device is designed for use in a wide variety of applications including wireless communications. It can be used for mobile, base station, access point, and backhaul applications. Additionally, the device can be used for analog and digital modulations, and other RF power amplifications.

The VMMK-1225-TR1G utilizes a novel three-dimensional stacking of two processes, the originator process (OP) and the complementary process (CP). This design reduces the number of layers required, and the size of the die. Consequently, it is able to provide high performance with low power consumption.

The MOSFET has a gate oxide thickness of five to six nanometers, which allows it to be operated at higher voltages and currents than other types of MOSFETS. Additionally, the device’s low resistance and low capacitance reduce switching time, power dissipation, and total harmonic distortion (THD). This feature makes it suitable for high-speed switching applications.

The VMMK-1225-TR1G also has a low on resistance of 35 milliohm, making it well-suited for high-frequency applications. This device features an integrated logic-level control, enabling it to work within the desired voltage range. This feature helps reduce the complexity of control circuits and further reduce power consumption.

Overall, the VMMK-1225-TR1G is an excellent choice for a wide range of RF applications. It features low power consumption, high performance, low on resistance, and low capacitance, making it ideal for high-speed performance. Additionally, its integrated logic-level control makes it suitable for use in complicated control systems. All of these features make it an optimal device for a variety of RF applications.

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