Allicdata Part #: | VN0109N3-G-ND |
Manufacturer Part#: |
VN0109N3-G |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 90V 0.35A TO92-3 |
More Detail: | N-Channel 90V 350mA (Tj) 1W (Tc) Through Hole TO-9... |
DataSheet: | VN0109N3-G Datasheet/PDF |
Quantity: | 2171 |
1 +: | $ 0.40950 |
25 +: | $ 0.34398 |
100 +: | $ 0.31147 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 90V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 65pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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VN0109N3-G transistors are field effect transistors (FETs), which are designed for use as adjustable power limiting devices and are widely used for power supply circuits. These transistors are also used in audio amplifiers, as well as for power MOSFETs.
Unlike bipolar transistors, which are current-controlled, FETs are voltage-controlled. This makes them more effective than bipolar transistors when used in circuits where the maximum power is required. With a higher voltage and current rating than the typical bipolar transistors, VN0109N3-G FETs are well-suited for applications where high-current electronic components, such as transistors, diodes, and other semiconductor devices, are needed.
FETs are divided into two major categories: N-channel and P-channel. N-channel is the more commonly used type and is composed of a source, a gate, and a drain. The source is the connection point on a transistor that feeds the current into the transistor. The gate is a control element that determines the current flow, while the drain is the output.
VN0109N3-G transistors consist of an N-channel FET and a P-channel FET integrated into one part. This single component combines the features of both N-channel and P-channel FETs and enables the user to adjust the power limit of each channel. This allows for a more efficient design and better power efficiency.
The working principle of VN0109N3-G transistors is simple. When a current passes through the N-channel FET, the gate voltage (VGS) rises and causes the current to reduce. At the same time, the P-channel FET will be activated, and a higher gate voltage (VGS) will be applied to the P-channel, allowing more current to flow. In this way, VN0109N3-G transistors can be fine-tuned to provide the desired power limit.
VN0109N3-G transistors are some of the most efficient and reliable devices available for the efficient and safe operation of power supplies. Due to their integrated design, they can be used to provide adjustable power limit and power stability. Furthermore, their wide voltage and current rating make them suitable for most power supply circuits. As a result, VN0109N3-G transistors are popular in many applications such as audio amplifiers, automotive electronics, consumer electronics, and industrial control systems.
The specific data is subject to PDF, and the above content is for reference
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