| Allicdata Part #: | VS-FC220SA20-ND |
| Manufacturer Part#: |
VS-FC220SA20 |
| Price: | $ 25.66 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | MOSFET N-CH 200V 220A SOT-227 |
| More Detail: | N-Channel 200V 220A (Tc) 789W (Tc) Chassis Mount S... |
| DataSheet: |  VS-FC220SA20 Datasheet/PDF |
| Quantity: | 1000 |
| 160 +: | $ 23.32060 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id: | 5.1V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 21000pF @ 50V |
| FET Feature: | -- |
| Power Dissipation (Max): | 789W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Supplier Device Package: | SOT-227 |
| Package / Case: | SOT-227-4, miniBLOC |
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A metal-oxide-semiconductor field-effect transistor (MOSFET) is a device used in electronics for switching and amplification purposes. The VS-FC220SA20 is a type of MOSFET which is specifically designed for use in VSWR integration circuits. It is also known as a "dry plateau" MOSFET and is used in high-frequency applications.
The VS-FC220SA20 belongs to a family of n-channel enhancement mode MOSFETs which are ideal for high-frequency applications. It has a very low input capacitance and a high cut-off frequency, making it perfect for a wide range of RF and other high-frequency applications. The VS-FC220SA20 has a very low reverse current and a high breakdown voltage, making it highly reliable and suitable for sensitive applications.
The working principle of a MOSFET is based on the Gate-Channel-Drain (G-C-D) structure. When a voltage is applied to the gate of the MOSFET, it forms an electric field, which influences the charge carriers of the channel. This electric field creates a "gate current" which controls the voltage between the channel and the drain. The current between the channel and the drain is determined by the applied gate current, which in turn is determined by the voltage applied to the gate.
In the case of the VS-FC220SA20, the gate current is determined by the voltage applied to the gate, which is equal to the VSWR integration voltage. The VSWR integrates the effect of the electric field of the gate on the charge carriers in the channel, which in turn determines the current in the drain. The VSWR integration voltage is adjusted to control the gate current and thus the MOSFET\'s drain current.
The VS-FC220SA20 has a low cut-off frequency of 10GHz, making it suitable for use in high-frequency applications. The device has a low on-resistance of 8Ohms and a high breakdown voltage of 61V, making it ideal for use in high-frequency circuits. These features make the VS-FC220SA20 ideal for use in RF circuits, such as amplifiers, mixers, modulators, and antennas. It is also suitable for use in microwave circuits for applications such as driver circuits, low noise amplifiers, and HBTs.
In summary, the VS-FC220SA20 is a metal-oxide-semiconductor field-effect transistor which is specifically designed for use in VSWR integration circuits. The device has a low cut-off frequency of 10GHz and has a low on-resistance of 8Ohms and a high breakdown voltage of 61V, making it suitable for use in high-frequency circuits. The device\'s working principle is based on the Gate-Channel-Drain (G-C-D) structure, with the gate current determining the drain current. Its features make it ideal for use in RF and microwave circuits, such as amplifiers, mixers, modulators, and antennas.
The specific data is subject to PDF, and the above content is for reference
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