Allicdata Part #: | VS-FC270SA20-ND |
Manufacturer Part#: |
VS-FC270SA20 |
Price: | $ 18.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | OUTPUT & SW MODULES - SOT-227 |
More Detail: | N-Channel 200V 287A (Tc) 937W (Tc) Chassis Mount S... |
DataSheet: | VS-FC270SA20 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 17.04150 |
10 +: | $ 15.71910 |
25 +: | $ 15.01260 |
100 +: | $ 13.42310 |
250 +: | $ 12.80500 |
500 +: | $ 12.18690 |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 937W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 16500pF @ 100V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 4.3V @ 1mA |
Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 200A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 287A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The VS-FC270SA20 is a transistor device capable of amplifying electrical signals. It is categorized as a type of FET, or metal–oxide–semiconductor field effect transistor, and is a single device type. These are commonly found in high-power analog circuits, controlling varying electrical currents and voltages. The device primarily conveyed by the VS-FC270SA20 is labelled as an n-channel enhancement mode Field Effect Transistor (FET).
The function of such transistors is to act as a switch to control certain processes, for instance, amplification of signals. When the gate voltage is applied and a certain amount of current is passing through the device, it becomes active allowing more current to pass from Source to Drain of the device. The voltage applied to the gate is what triggers the device to turn on or off. For the VS-FC270SA20, a gate voltage of between 4V to 20V is specified. The device is able to deliver a current of 70A and its Voltage Range is -2.5 to +20V. In addition, the device is capable of dissipating power up to 300W.
The VS-FC270SA20 is often used in surge currents applications, such as junction boxes. The device is also used in car audio amplifiers, electric welding machines and different types of industrial equipment. It is designed to provide a low-impedance connection and is capable of delivering power at higher frequencies, providing improved stability and load regulation performance. Additionally, the VS-FC270SA20 has the advantage of having a low input capacitance making it suitable for high-speed switching applications.
The VS-FC270SA20 is a single device type, as there is one component in the form of an FET. This type of transistor is used when two independently controllable inputs are required. In this instance, the two inputs are the voltage applied to the gate, which triggers the device to turn on and off, and the current generated by the Source to Drain, which is what will actually control the device.
The mode of operation of the transistor is called enhancement mode. In enhancement mode, the current does not flow through the device when there is no voltage applied to the gate. This is the opposite of depletion mode, where the current flows through the device even when no voltage is applied to the gate. To turn the device off, a voltage needs to be applied to the gate greater than the gate threshold voltage. This results in the channel being “pinched-off”, therefore not allowing current to pass through the device.
In summary, the VS-FC270SA20 is a type of FET which is categorised as an n-channel enhancement mode device. It is capable of dissipating power of up to 300W, with a current rating of 70A, and has a voltage range of -2.5 to +20V. It is suitable for applications such as surge current, car audio amplifiers, electric welding machines and different types of industrial equipment. It has the advantage of having a low input capacitance, making it an effective device for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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